Characterization and quantitative analysis of ultra-thin GaAs single-junction solar cells with reflective back scattering

Keyphrases

• Absorption Edge 50%
• AlInP 50%
• Backscatter 100%
• Device Performance 50%
• Equivalent Circuit Model 50%
• Experimental Values 50%
• External Quantum Efficiency 100%
• Fill Factor 50%
• Gallium Arsenide 50%
• Lambertian 50%
• Non-ideality 50%
• Nonideal Scattering 50%
• Nonradiative Recombination 100%
• Open-circuit Voltage 50%
• Phong 100%
• Recombination Resistance 50%
• Reflectivity 100%
• Resistivity 50%
• Series Resistance 100%
• Short-circuit Current Density 50%
• Single Diode Equivalent Circuit 50%
• Single-junction Solar Cell 100%
• Ultrathin GaAs 100%

Engineering

• Absorption Edge 33%
• Device Performance 33%
• Equivalent Circuit Model 33%
• Experimental Value 33%
• External Quantum Efficiency 66%
• Fill Factor 33%
• Gallium Arsenide 100%
• Junction Solar Cell 100%
• Open Circuit Voltage 33%
• Radiative Recombination 66%
• Reflectance 66%
• Series Resistance 66%
• Short-Circuit Current Density 33%