Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices

Meiqi Guo; Ying Chen Chen; Yao Feng Chang; Xiaohan Wu; Burt Fowler; Yonggang Zhao; Jack C. Lee

doi:10.1109/DRC.2016.7548460

Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices

Meiqi Guo, Ying Chen Chen, Yao Feng Chang, Xiaohan Wu, Burt Fowler, Yonggang Zhao, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Recently, resistive random access memory (RRAM) using various metal oxides (i.e., SiO₂[1], HfO₂, NiO[2], Al₂O₃, NbO) have attracted a lot of attentions since the current nonvolatile memory (NVM) approaching the scaling limits. Meanwhile, the selector devices are essential to address the sneak path issue which causing the reading errors in high-packing-density cross-bar RRAM array. Several types of selector devices with threshold switching (TS) behavior has been investigated, such as rectifying diode[3], varistors[4], ovonic TS (OTS)[5], metal-insulator transition (MIT)[6] etc. In this work, the characteristics of electrically driven MIT (E-MIT) in both Nb-doped SrTiO₃ and HfO₂-based selector devices has been investigated.

Original language	English (US)
Title of host publication	74th Annual Device Research Conference, DRC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509028276
DOIs	https://doi.org/10.1109/DRC.2016.7548460
State	Published - Aug 22 2016
Externally published	Yes
Event	74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2016-August
ISSN (Print)	1548-3770

Other

Other	74th Annual Device Research Conference, DRC 2016
Country/Territory	United States
City	Newark
Period	6/19/16 → 6/22/16

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2016.7548460

Cite this

Guo, M., Chen, Y. C., Chang, Y. F., Wu, X., Fowler, B., Zhao, Y., & Lee, J. C. (2016). Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices. In 74th Annual Device Research Conference, DRC 2016 Article 7548460 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548460

Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices. / Guo, Meiqi; Chen, Ying Chen; Chang, Yao Feng et al.
74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7548460 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Guo, M, Chen, YC, Chang, YF, Wu, X, Fowler, B, Zhao, Y & Lee, JC 2016, Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices. in 74th Annual Device Research Conference, DRC 2016., 7548460, Device Research Conference - Conference Digest, DRC, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 74th Annual Device Research Conference, DRC 2016, Newark, United States, 6/19/16. https://doi.org/10.1109/DRC.2016.7548460

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title = "Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices",

abstract = "Recently, resistive random access memory (RRAM) using various metal oxides (i.e., SiO2[1], HfO2, NiO[2], Al2O3, NbO) have attracted a lot of attentions since the current nonvolatile memory (NVM) approaching the scaling limits. Meanwhile, the selector devices are essential to address the sneak path issue which causing the reading errors in high-packing-density cross-bar RRAM array. Several types of selector devices with threshold switching (TS) behavior has been investigated, such as rectifying diode[3], varistors[4], ovonic TS (OTS)[5], metal-insulator transition (MIT)[6] etc. In this work, the characteristics of electrically driven MIT (E-MIT) in both Nb-doped SrTiO3 and HfO2-based selector devices has been investigated.",

author = "Meiqi Guo and Chen, {Ying Chen} and Chang, {Yao Feng} and Xiaohan Wu and Burt Fowler and Yonggang Zhao and Lee, {Jack C.}",

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doi = "10.1109/DRC.2016.7548460",

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AU - Guo, Meiqi

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AU - Zhao, Yonggang

AU - Lee, Jack C.

PY - 2016/8/22

Y1 - 2016/8/22

N2 - Recently, resistive random access memory (RRAM) using various metal oxides (i.e., SiO2[1], HfO2, NiO[2], Al2O3, NbO) have attracted a lot of attentions since the current nonvolatile memory (NVM) approaching the scaling limits. Meanwhile, the selector devices are essential to address the sneak path issue which causing the reading errors in high-packing-density cross-bar RRAM array. Several types of selector devices with threshold switching (TS) behavior has been investigated, such as rectifying diode[3], varistors[4], ovonic TS (OTS)[5], metal-insulator transition (MIT)[6] etc. In this work, the characteristics of electrically driven MIT (E-MIT) in both Nb-doped SrTiO3 and HfO2-based selector devices has been investigated.

AB - Recently, resistive random access memory (RRAM) using various metal oxides (i.e., SiO2[1], HfO2, NiO[2], Al2O3, NbO) have attracted a lot of attentions since the current nonvolatile memory (NVM) approaching the scaling limits. Meanwhile, the selector devices are essential to address the sneak path issue which causing the reading errors in high-packing-density cross-bar RRAM array. Several types of selector devices with threshold switching (TS) behavior has been investigated, such as rectifying diode[3], varistors[4], ovonic TS (OTS)[5], metal-insulator transition (MIT)[6] etc. In this work, the characteristics of electrically driven MIT (E-MIT) in both Nb-doped SrTiO3 and HfO2-based selector devices has been investigated.

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Characteristics of Nb-doped SrTiO3 and HfO2-based selector devices

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