Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

R. Leon; G. M. Swift; B. Magness; W. A. Taylor; Y. S. Tang; K. L. Wang; P. Dowd; Yong-Hang Zhang

doi:10.1063/1.126259

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

R. Leon
, G. M. Swift
, B. Magness
, W. A. Taylor
, Y. S. Tang
, K. L. Wang
, P. Dowd
, Yong-Hang Zhang

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

Original language	English (US)
Pages (from-to)	2074-2076
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	15
DOIs	https://doi.org/10.1063/1.126259
State	Published - Apr 10 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126259

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title = "Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots",

abstract = "The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.",

author = "R. Leon and Swift, \{G. M.\} and B. Magness and Taylor, \{W. A.\} and Tang, \{Y. S.\} and Wang, \{K. L.\} and P. Dowd and Yong-Hang Zhang",

year = "2000",

month = apr,

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doi = "10.1063/1.126259",

language = "English (US)",

volume = "76",

pages = "2074--2076",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Changes in luminescence emission induced by proton irradiation

T2 - InGaAs/GaAs quantum wells and quantum dots

AU - Leon, R.

AU - Swift, G. M.

AU - Magness, B.

AU - Taylor, W. A.

AU - Tang, Y. S.

AU - Wang, K. L.

AU - Dowd, P.

AU - Zhang, Yong-Hang

PY - 2000/4/10

Y1 - 2000/4/10

N2 - The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

AB - The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

UR - https://www.scopus.com/pages/publications/0000270045

UR - https://www.scopus.com/pages/publications/0000270045#tab=citedBy

U2 - 10.1063/1.126259

DO - 10.1063/1.126259

M3 - Article

AN - SCOPUS:0000270045

SN - 0003-6951

VL - 76

SP - 2074

EP - 2076

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

Abstract

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