Cadmium selenide nanowire solar cells with copper-doped zinc telluride window layers were designed and fabricated. I-V characterization was conducted in the dark and under illumination by a halogen lamp. Open-circuit voltages as high as 188 mV were obtained, though short-circuit currents were on the order of nA. The low currents are attributed to the small fraction of nanowires which protrude from the isolation layer and contribute to the device output. These devices also showed significant shunting, which is attributed to Cu migration through the ZnTe layer, as well as series resistance. The maximum open-circuit voltage of 188 mV was on the order of similar film-based cells in literature. Future applications in spectrum-splitting solar cells based on spatially composition-graded alloy nanowires in the CdxPb1-xS ySe1-y materials system will be discussed.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Print)9781479932993
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL


  • Doping
  • Heterojunctions
  • II-VI semiconductor materials
  • Nanowires
  • Photovoltaic cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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