This paper describes cation-based resistive memory, which utilizes a high resistance silver- or copper-containing oxide or higher chalcogenide electrolyte sandwiched between oxidizable and inert electrodes. Device function is via ion transport and redox reactions which form or dissolve a conductive metallic bridge. The on-state resistance is controlled by the programming conditions, allowing multi-level/multi-bit storage via discrete resistance states. A doped Si electrode may be used with the on-state filament to create an integrated rectifying isolation element which potentially allows multi-layer compact passive structures to be fabricated. The paper features foundry-produced arrays as well as some of the latest research findings on devices that utilize Ag-Ge-S and Cu-SiO2 ion conducting films.

Original languageEnglish (US)
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China
Duration: Jun 21 2011Jun 24 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523


Other4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan, Province of China


  • Ionic memory
  • Programmable Metallization Cell
  • multi-level cell and active and passive arrays
  • resistance change

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Cation-based resistive memory'. Together they form a unique fingerprint.

Cite this