Carbon-induced Ge islands on Si(001) grown by LPCVD

Michael Goryll; L. Vescan; H. Lüth

Carbon-induced Ge islands on Si(001) grown by LPCVD

Michael Goryll
, L. Vescan
, H. Lüth

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C ₃H ₈) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	J.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones
Pages	115-122
Number of pages	8
Volume	618
State	Published - 2000
Externally published	Yes
Event	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000

Other

Other	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films
Country/Territory	United States
City	San Francisco, CA
Period	4/24/00 → 4/27/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{a92f292b379544a7baf3590000ca8a16,

title = "Carbon-induced Ge islands on Si(001) grown by LPCVD",

abstract = "The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C 3H 8) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed. ",

author = "Michael Goryll and L. Vescan and H. L{\"u}th",

year = "2000",

language = "English (US)",

volume = "618",

pages = "115--122",

editor = "J.M. Millunchick and A.L. Barabasi and N.A. Modine and E.D. Jones",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films ; Conference date: 24-04-2000 Through 27-04-2000",

}

TY - GEN

T1 - Carbon-induced Ge islands on Si(001) grown by LPCVD

AU - Goryll, Michael

AU - Vescan, L.

AU - Lüth, H.

PY - 2000

Y1 - 2000

N2 - The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C 3H 8) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed.

AB - The formation of carbon-induced Ge islands has been studied using low-pressure chemical vapour deposition (LPCVD) of Ge on Si(001) at temperatures between 600°C and 700°C. Propane (C 3H 8) diluted in He was used as a carbon source. The experiments show that the influence of carbon was most significant for deposition at low growth temperature of the Ge island layer. Small-sized islands with a narrow size distribution could be achieved using a carbon adsorption layer. Compared to a sample grown without this layer, the size distribution was significantly smaller. An enhancement of the growth rate of Ge, as seen from Rutherford backscattering spectroscopy (RBS) will be discussed.

UR - https://www.scopus.com/pages/publications/0034448045

UR - https://www.scopus.com/pages/publications/0034448045#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0034448045

VL - 618

SP - 115

EP - 122

BT - Materials Research Society Symposium - Proceedings

A2 - Millunchick, J.M.

A2 - Barabasi, A.L.

A2 - Modine, N.A.

A2 - Jones, E.D.

T2 - Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films

Y2 - 24 April 2000 through 27 April 2000

ER -

Carbon-induced Ge islands on Si(001) grown by LPCVD

Abstract

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ASJC Scopus subject areas

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