Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering

Ying Chen Chen; Yao Feng Chang; Chih Yang Lin; Xiaohan Wu; Gaobo Xu; Burt Fowler; Ting Chang Chang; Jack C. Lee

doi:10.1149/08010.0923ecst

Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering

Ying Chen Chen, Yao Feng Chang, Chih Yang Lin, Xiaohan Wu, Gaobo Xu, Burt Fowler, Ting Chang Chang, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

The sneak-path leakage current issue is one of the severe hindrances for the application of high density resistive random access memory (RRAM) array design. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of HfO_x/SiO_x-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing internal filament location with low effective dielectric constant intending in HfO_x/SiO_x structure. The stacking HfO_x/SiO_x-based RRAM device as the one-resistor-only memory cell is applicable without additional selector device to solve the sneak-path issue with switching voltage ~1 V, which is desirable for low power operating in built-in nonlinearity crossbar array configuration.

Original language	English (US)
Title of host publication	ECS Transactions
Editors	A. P. Abbott, R. Alkire, P. Allongue, T. J. Anderson, P. N. Bartlett, M. Bayachou, S. Bhansali, N. Birbilis, A. B. Bocarsly, C. Bock, O. V. Boltalina, S. Brankovic, R. Buchheit, D. A. Buttry, S. Calabrese Barton, M. T. Carter, V. Chaitanya, G. T. Cheek, Z. Chen, D. Chidambaram, B. A. Chin, J. W. Choi, D. Chu, D. E. Cliffel, H. Deligianni, V. Di Noto, N. Dimitrov, M. Doeff, E. A. Douglas, T. Druffel, K. Edstrom, J. M. Fenton, J. Fergus, J. Fransaer, Y. Fukunaka, D. Guyomard, H. Hamada, L. M. Haverhals, P. Hesketh, A. C. Hillier, J. K. Hite, H. Imahori, M. Inaba, M. Innocenti, M. Itagaki, C. Johnson, H. Katayama, S. H. Kilgore, D. J. Kim, J. Koehne, R. Kostecki, G. Krumdick, P. J. Kulesza, J. Leddy, J. J. Lee, O. Leonte, Y. C. Lu, B. L. Lucht, R. P. Lynch, M. Manivannan, R. A. Mantz, P. Marcus, V. Maurice, M. Mauter, J. Mauzeroll, H. N. McMurray, Y. S. Meng, E. L. Miller, I. Milosev, S. D. Minteer, S. Mitra, S. Mukerjee, R. Mukundan, J. Muldoon, L. Nagahara, S. R. Narayan, P. M. Natishan, M. Navaei, J. D. Nicholas, J. Noel, S. S. Nonnenmann, C. O'Dwyer, M. E. Orazem, Y. Oren, J. G. Park, P. Pharkya, P. N. Pintauro, S. Pylypenko, K. Rajeshwar, R. P. Ramasamy, C. Rhodes, D. P. Riemer, D. Roeper, M. Rohwerder, L. Romankiw, S. V. Rotkin, J. L. M. Rupp, M. J. Sailor, D. T. Schwartz, P. K. Sekhar, N. Sharma, A. Simonian, D. K. Smith, K. C. Smith, L. Soleymani, G. R. Stafford, J. A. Staser, V. Subramanian, V. R. Subramanian, K. B. Sundaram, A. H. Suroviec, K. Suto, M. Tao, T. Tatsuma, P. C. Trulove, P. Vanysek, N. Vasiljevic, J. T. Vaughey, S. Virtanen, H. Wang, W. Wang, J. F. Whitacre, G. Williams, M. Winter, D. L. Wood, G. Wu, N. Wu, J. Xiao, Y. Xing, H. Xu, J. J. Yang, G. Zangari
Publisher	Electrochemical Society Inc.
Pages	923-931
Number of pages	9
Edition	10
ISBN (Electronic)	9781607688273
ISBN (Print)	9781623324797
DOIs	https://doi.org/10.1149/08010.0923ecst
State	Published - 2017
Externally published	Yes
Event	232nd ECS Meeting - National Harbor, United States Duration: Oct 1 2017 → Oct 5 2017

Publication series

Name	ECS Transactions
Number	10
Volume	80
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	232nd ECS Meeting
Country/Territory	United States
City	National Harbor
Period	10/1/17 → 10/5/17

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/08010.0923ecst

Cite this

Chen, Y. C., Chang, Y. F., Lin, C. Y., Wu, X., Xu, G., Fowler, B., Chang, T. C., & Lee, J. C. (2017). Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering. In A. P. Abbott, R. Alkire, P. Allongue, T. J. Anderson, P. N. Bartlett, M. Bayachou, S. Bhansali, N. Birbilis, A. B. Bocarsly, C. Bock, O. V. Boltalina, S. Brankovic, R. Buchheit, D. A. Buttry, S. Calabrese Barton, M. T. Carter, V. Chaitanya, G. T. Cheek, Z. Chen, D. Chidambaram, B. A. Chin, J. W. Choi, D. Chu, D. E. Cliffel, H. Deligianni, V. Di Noto, N. Dimitrov, M. Doeff, E. A. Douglas, T. Druffel, K. Edstrom, J. M. Fenton, J. Fergus, J. Fransaer, Y. Fukunaka, D. Guyomard, H. Hamada, L. M. Haverhals, P. Hesketh, A. C. Hillier, J. K. Hite, H. Imahori, M. Inaba, M. Innocenti, M. Itagaki, C. Johnson, H. Katayama, S. H. Kilgore, D. J. Kim, J. Koehne, R. Kostecki, G. Krumdick, P. J. Kulesza, J. Leddy, J. J. Lee, O. Leonte, Y. C. Lu, B. L. Lucht, R. P. Lynch, M. Manivannan, R. A. Mantz, P. Marcus, V. Maurice, M. Mauter, J. Mauzeroll, H. N. McMurray, Y. S. Meng, E. L. Miller, I. Milosev, S. D. Minteer, S. Mitra, S. Mukerjee, R. Mukundan, J. Muldoon, L. Nagahara, S. R. Narayan, P. M. Natishan, M. Navaei, J. D. Nicholas, J. Noel, S. S. Nonnenmann, C. O'Dwyer, M. E. Orazem, Y. Oren, J. G. Park, P. Pharkya, P. N. Pintauro, S. Pylypenko, K. Rajeshwar, R. P. Ramasamy, C. Rhodes, D. P. Riemer, D. Roeper, M. Rohwerder, L. Romankiw, S. V. Rotkin, J. L. M. Rupp, M. J. Sailor, D. T. Schwartz, P. K. Sekhar, N. Sharma, A. Simonian, D. K. Smith, K. C. Smith, L. Soleymani, G. R. Stafford, J. A. Staser, V. Subramanian, V. R. Subramanian, K. B. Sundaram, A. H. Suroviec, K. Suto, M. Tao, T. Tatsuma, P. C. Trulove, P. Vanysek, N. Vasiljevic, J. T. Vaughey, S. Virtanen, H. Wang, W. Wang, J. F. Whitacre, G. Williams, M. Winter, D. L. Wood, G. Wu, N. Wu, J. Xiao, Y. Xing, H. Xu, J. J. Yang, ... G. Zangari (Eds.), ECS Transactions (10 ed., pp. 923-931). (ECS Transactions; Vol. 80, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/08010.0923ecst

Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering. / Chen, Ying Chen; Chang, Yao Feng; Lin, Chih Yang et al.
ECS Transactions. ed. / A. P. Abbott; R. Alkire; P. Allongue; T. J. Anderson; P. N. Bartlett; M. Bayachou; S. Bhansali; N. Birbilis; A. B. Bocarsly; C. Bock; O. V. Boltalina; S. Brankovic; R. Buchheit; D. A. Buttry; S. Calabrese Barton; M. T. Carter; V. Chaitanya; G. T. Cheek; Z. Chen; D. Chidambaram; B. A. Chin; J. W. Choi; D. Chu; D. E. Cliffel; H. Deligianni; V. Di Noto; N. Dimitrov; M. Doeff; E. A. Douglas; T. Druffel; K. Edstrom; J. M. Fenton; J. Fergus; J. Fransaer; Y. Fukunaka; D. Guyomard; H. Hamada; L. M. Haverhals; P. Hesketh; A. C. Hillier; J. K. Hite; H. Imahori; M. Inaba; M. Innocenti; M. Itagaki; C. Johnson; H. Katayama; S. H. Kilgore; D. J. Kim; J. Koehne; R. Kostecki; G. Krumdick; P. J. Kulesza; J. Leddy; J. J. Lee; O. Leonte; Y. C. Lu; B. L. Lucht; R. P. Lynch; M. Manivannan; R. A. Mantz; P. Marcus; V. Maurice; M. Mauter; J. Mauzeroll; H. N. McMurray; Y. S. Meng; E. L. Miller; I. Milosev; S. D. Minteer; S. Mitra; S. Mukerjee; R. Mukundan; J. Muldoon; L. Nagahara; S. R. Narayan; P. M. Natishan; M. Navaei; J. D. Nicholas; J. Noel; S. S. Nonnenmann; C. O'Dwyer; M. E. Orazem; Y. Oren; J. G. Park; P. Pharkya; P. N. Pintauro; S. Pylypenko; K. Rajeshwar; R. P. Ramasamy; C. Rhodes; D. P. Riemer; D. Roeper; M. Rohwerder; L. Romankiw; S. V. Rotkin; J. L. M. Rupp; M. J. Sailor; D. T. Schwartz; P. K. Sekhar; N. Sharma; A. Simonian; D. K. Smith; K. C. Smith; L. Soleymani; G. R. Stafford; J. A. Staser; V. Subramanian; V. R. Subramanian; K. B. Sundaram; A. H. Suroviec; K. Suto; M. Tao; T. Tatsuma; P. C. Trulove; P. Vanysek; N. Vasiljevic; J. T. Vaughey; S. Virtanen; H. Wang; W. Wang; J. F. Whitacre; G. Williams; M. Winter; D. L. Wood; G. Wu; N. Wu; J. Xiao; Y. Xing; H. Xu; J. J. Yang; G. Zangari. 10. ed. Electrochemical Society Inc., 2017. p. 923-931 (ECS Transactions; Vol. 80, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, YC, Chang, YF, Lin, CY, Wu, X, Xu, G, Fowler, B, Chang, TC & Lee, JC 2017, Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering. in AP Abbott, R Alkire, P Allongue, TJ Anderson, PN Bartlett, M Bayachou, S Bhansali, N Birbilis, AB Bocarsly, C Bock, OV Boltalina, S Brankovic, R Buchheit, DA Buttry, S Calabrese Barton, MT Carter, V Chaitanya, GT Cheek, Z Chen, D Chidambaram, BA Chin, JW Choi, D Chu, DE Cliffel, H Deligianni, V Di Noto, N Dimitrov, M Doeff, EA Douglas, T Druffel, K Edstrom, JM Fenton, J Fergus, J Fransaer, Y Fukunaka, D Guyomard, H Hamada, LM Haverhals, P Hesketh, AC Hillier, JK Hite, H Imahori, M Inaba, M Innocenti, M Itagaki, C Johnson, H Katayama, SH Kilgore, DJ Kim, J Koehne, R Kostecki, G Krumdick, PJ Kulesza, J Leddy, JJ Lee, O Leonte, YC Lu, BL Lucht, RP Lynch, M Manivannan, RA Mantz, P Marcus, V Maurice, M Mauter, J Mauzeroll, HN McMurray, YS Meng, EL Miller, I Milosev, SD Minteer, S Mitra, S Mukerjee, R Mukundan, J Muldoon, L Nagahara, SR Narayan, PM Natishan, M Navaei, JD Nicholas, J Noel, SS Nonnenmann, C O'Dwyer, ME Orazem, Y Oren, JG Park, P Pharkya, PN Pintauro, S Pylypenko, K Rajeshwar, RP Ramasamy, C Rhodes, DP Riemer, D Roeper, M Rohwerder, L Romankiw, SV Rotkin, JLM Rupp, MJ Sailor, DT Schwartz, PK Sekhar, N Sharma, A Simonian, DK Smith, KC Smith, L Soleymani, GR Stafford, JA Staser, V Subramanian, VR Subramanian, KB Sundaram, AH Suroviec, K Suto, M Tao, T Tatsuma, PC Trulove, P Vanysek, N Vasiljevic, JT Vaughey, S Virtanen, H Wang, W Wang, JF Whitacre, G Williams, M Winter, DL Wood, G Wu, N Wu, J Xiao, Y Xing, H Xu, JJ Yang & G Zangari (eds), ECS Transactions. 10 edn, ECS Transactions, no. 10, vol. 80, Electrochemical Society Inc., pp. 923-931, 232nd ECS Meeting, National Harbor, United States, 10/1/17. https://doi.org/10.1149/08010.0923ecst

Chen YC, Chang YF, Lin CY, Wu X, Xu G, Fowler B et al. Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering. In Abbott AP, Alkire R, Allongue P, Anderson TJ, Bartlett PN, Bayachou M, Bhansali S, Birbilis N, Bocarsly AB, Bock C, Boltalina OV, Brankovic S, Buchheit R, Buttry DA, Calabrese Barton S, Carter MT, Chaitanya V, Cheek GT, Chen Z, Chidambaram D, Chin BA, Choi JW, Chu D, Cliffel DE, Deligianni H, Di Noto V, Dimitrov N, Doeff M, Douglas EA, Druffel T, Edstrom K, Fenton JM, Fergus J, Fransaer J, Fukunaka Y, Guyomard D, Hamada H, Haverhals LM, Hesketh P, Hillier AC, Hite JK, Imahori H, Inaba M, Innocenti M, Itagaki M, Johnson C, Katayama H, Kilgore SH, Kim DJ, Koehne J, Kostecki R, Krumdick G, Kulesza PJ, Leddy J, Lee JJ, Leonte O, Lu YC, Lucht BL, Lynch RP, Manivannan M, Mantz RA, Marcus P, Maurice V, Mauter M, Mauzeroll J, McMurray HN, Meng YS, Miller EL, Milosev I, Minteer SD, Mitra S, Mukerjee S, Mukundan R, Muldoon J, Nagahara L, Narayan SR, Natishan PM, Navaei M, Nicholas JD, Noel J, Nonnenmann SS, O'Dwyer C, Orazem ME, Oren Y, Park JG, Pharkya P, Pintauro PN, Pylypenko S, Rajeshwar K, Ramasamy RP, Rhodes C, Riemer DP, Roeper D, Rohwerder M, Romankiw L, Rotkin SV, Rupp JLM, Sailor MJ, Schwartz DT, Sekhar PK, Sharma N, Simonian A, Smith DK, Smith KC, Soleymani L, Stafford GR, Staser JA, Subramanian V, Subramanian VR, Sundaram KB, Suroviec AH, Suto K, Tao M, Tatsuma T, Trulove PC, Vanysek P, Vasiljevic N, Vaughey JT, Virtanen S, Wang H, Wang W, Whitacre JF, Williams G, Winter M, Wood DL, Wu G, Wu N, Xiao J, Xing Y, Xu H, Yang JJ, Zangari G, editors, ECS Transactions. 10 ed. Electrochemical Society Inc. 2017. p. 923-931. (ECS Transactions; 10). doi: 10.1149/08010.0923ecst

Chen, Ying Chen ; Chang, Yao Feng ; Lin, Chih Yang et al. / Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering. ECS Transactions. editor / A. P. Abbott ; R. Alkire ; P. Allongue ; T. J. Anderson ; P. N. Bartlett ; M. Bayachou ; S. Bhansali ; N. Birbilis ; A. B. Bocarsly ; C. Bock ; O. V. Boltalina ; S. Brankovic ; R. Buchheit ; D. A. Buttry ; S. Calabrese Barton ; M. T. Carter ; V. Chaitanya ; G. T. Cheek ; Z. Chen ; D. Chidambaram ; B. A. Chin ; J. W. Choi ; D. Chu ; D. E. Cliffel ; H. Deligianni ; V. Di Noto ; N. Dimitrov ; M. Doeff ; E. A. Douglas ; T. Druffel ; K. Edstrom ; J. M. Fenton ; J. Fergus ; J. Fransaer ; Y. Fukunaka ; D. Guyomard ; H. Hamada ; L. M. Haverhals ; P. Hesketh ; A. C. Hillier ; J. K. Hite ; H. Imahori ; M. Inaba ; M. Innocenti ; M. Itagaki ; C. Johnson ; H. Katayama ; S. H. Kilgore ; D. J. Kim ; J. Koehne ; R. Kostecki ; G. Krumdick ; P. J. Kulesza ; J. Leddy ; J. J. Lee ; O. Leonte ; Y. C. Lu ; B. L. Lucht ; R. P. Lynch ; M. Manivannan ; R. A. Mantz ; P. Marcus ; V. Maurice ; M. Mauter ; J. Mauzeroll ; H. N. McMurray ; Y. S. Meng ; E. L. Miller ; I. Milosev ; S. D. Minteer ; S. Mitra ; S. Mukerjee ; R. Mukundan ; J. Muldoon ; L. Nagahara ; S. R. Narayan ; P. M. Natishan ; M. Navaei ; J. D. Nicholas ; J. Noel ; S. S. Nonnenmann ; C. O'Dwyer ; M. E. Orazem ; Y. Oren ; J. G. Park ; P. Pharkya ; P. N. Pintauro ; S. Pylypenko ; K. Rajeshwar ; R. P. Ramasamy ; C. Rhodes ; D. P. Riemer ; D. Roeper ; M. Rohwerder ; L. Romankiw ; S. V. Rotkin ; J. L. M. Rupp ; M. J. Sailor ; D. T. Schwartz ; P. K. Sekhar ; N. Sharma ; A. Simonian ; D. K. Smith ; K. C. Smith ; L. Soleymani ; G. R. Stafford ; J. A. Staser ; V. Subramanian ; V. R. Subramanian ; K. B. Sundaram ; A. H. Suroviec ; K. Suto ; M. Tao ; T. Tatsuma ; P. C. Trulove ; P. Vanysek ; N. Vasiljevic ; J. T. Vaughey ; S. Virtanen ; H. Wang ; W. Wang ; J. F. Whitacre ; G. Williams ; M. Winter ; D. L. Wood ; G. Wu ; N. Wu ; J. Xiao ; Y. Xing ; H. Xu ; J. J. Yang ; G. Zangari. 10. ed. Electrochemical Society Inc., 2017. pp. 923-931 (ECS Transactions; 10).

@inproceedings{afc209475e214a3a93cc54051eb3cc01,

title = "Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering",

abstract = "The sneak-path leakage current issue is one of the severe hindrances for the application of high density resistive random access memory (RRAM) array design. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing internal filament location with low effective dielectric constant intending in HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without additional selector device to solve the sneak-path issue with switching voltage ~1 V, which is desirable for low power operating in built-in nonlinearity crossbar array configuration.",

author = "Chen, {Ying Chen} and Chang, {Yao Feng} and Lin, {Chih Yang} and Xiaohan Wu and Gaobo Xu and Burt Fowler and Chang, {Ting Chang} and Lee, {Jack C.}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",

year = "2017",

doi = "10.1149/08010.0923ecst",

language = "English (US)",

isbn = "9781623324797",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "923--931",

editor = "Abbott, {A. P.} and R. Alkire and P. Allongue and Anderson, {T. J.} and Bartlett, {P. N.} and M. Bayachou and S. Bhansali and N. Birbilis and Bocarsly, {A. B.} and C. Bock and Boltalina, {O. V.} and S. Brankovic and R. Buchheit and Buttry, {D. A.} and {Calabrese Barton}, S. and Carter, {M. T.} and V. Chaitanya and Cheek, {G. T.} and Z. Chen and D. Chidambaram and Chin, {B. A.} and Choi, {J. W.} and D. Chu and Cliffel, {D. E.} and H. Deligianni and {Di Noto}, V. and N. Dimitrov and M. Doeff and Douglas, {E. A.} and T. Druffel and K. Edstrom and Fenton, {J. M.} and J. Fergus and J. Fransaer and Y. Fukunaka and D. Guyomard and H. Hamada and Haverhals, {L. M.} and P. Hesketh and Hillier, {A. C.} and Hite, {J. K.} and H. Imahori and M. Inaba and M. Innocenti and M. Itagaki and C. Johnson and H. Katayama and Kilgore, {S. H.} and Kim, {D. J.} and J. Koehne and R. Kostecki and G. Krumdick and Kulesza, {P. J.} and J. Leddy and Lee, {J. J.} and O. Leonte and Lu, {Y. C.} and Lucht, {B. L.} and Lynch, {R. P.} and M. Manivannan and Mantz, {R. A.} and P. Marcus and V. Maurice and M. Mauter and J. Mauzeroll and McMurray, {H. N.} and Meng, {Y. S.} and Miller, {E. L.} and I. Milosev and Minteer, {S. D.} and S. Mitra and S. Mukerjee and R. Mukundan and J. Muldoon and L. Nagahara and Narayan, {S. R.} and Natishan, {P. M.} and M. Navaei and Nicholas, {J. D.} and J. Noel and Nonnenmann, {S. S.} and C. O'Dwyer and Orazem, {M. E.} and Y. Oren and Park, {J. G.} and P. Pharkya and Pintauro, {P. N.} and S. Pylypenko and K. Rajeshwar and Ramasamy, {R. P.} and C. Rhodes and Riemer, {D. P.} and D. Roeper and M. Rohwerder and L. Romankiw and Rotkin, {S. V.} and Rupp, {J. L. M.} and Sailor, {M. J.} and Schwartz, {D. T.} and Sekhar, {P. K.} and N. Sharma and A. Simonian and Smith, {D. K.} and Smith, {K. C.} and L. Soleymani and Stafford, {G. R.} and Staser, {J. A.} and V. Subramanian and Subramanian, {V. R.} and Sundaram, {K. B.} and Suroviec, {A. H.} and K. Suto and M. Tao and T. Tatsuma and Trulove, {P. C.} and P. Vanysek and N. Vasiljevic and Vaughey, {J. T.} and S. Virtanen and H. Wang and W. Wang and Whitacre, {J. F.} and G. Williams and M. Winter and Wood, {D. L.} and G. Wu and N. Wu and J. Xiao and Y. Xing and H. Xu and Yang, {J. J.} and G. Zangari",

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T1 - Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering

AU - Chen, Ying Chen

AU - Chang, Yao Feng

AU - Lin, Chih Yang

AU - Wu, Xiaohan

AU - Xu, Gaobo

AU - Fowler, Burt

AU - Chang, Ting Chang

AU - Lee, Jack C.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2017

Y1 - 2017

N2 - The sneak-path leakage current issue is one of the severe hindrances for the application of high density resistive random access memory (RRAM) array design. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing internal filament location with low effective dielectric constant intending in HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without additional selector device to solve the sneak-path issue with switching voltage ~1 V, which is desirable for low power operating in built-in nonlinearity crossbar array configuration.

AB - The sneak-path leakage current issue is one of the severe hindrances for the application of high density resistive random access memory (RRAM) array design. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing internal filament location with low effective dielectric constant intending in HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without additional selector device to solve the sneak-path issue with switching voltage ~1 V, which is desirable for low power operating in built-in nonlinearity crossbar array configuration.

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BT - ECS Transactions

A2 - Abbott, A. P.

A2 - Alkire, R.

A2 - Allongue, P.

A2 - Anderson, T. J.

A2 - Bartlett, P. N.

A2 - Bayachou, M.

A2 - Bhansali, S.

A2 - Birbilis, N.

A2 - Bocarsly, A. B.

A2 - Bock, C.

A2 - Boltalina, O. V.

A2 - Brankovic, S.

A2 - Buchheit, R.

A2 - Buttry, D. A.

A2 - Calabrese Barton, S.

A2 - Carter, M. T.

A2 - Chaitanya, V.

A2 - Cheek, G. T.

A2 - Chen, Z.

A2 - Chidambaram, D.

A2 - Chin, B. A.

A2 - Choi, J. W.

A2 - Chu, D.

A2 - Cliffel, D. E.

A2 - Deligianni, H.

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A2 - Fukunaka, Y.

A2 - Guyomard, D.

A2 - Hamada, H.

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A2 - Imahori, H.

A2 - Inaba, M.

A2 - Innocenti, M.

A2 - Itagaki, M.

A2 - Johnson, C.

A2 - Katayama, H.

A2 - Kilgore, S. H.

A2 - Kim, D. J.

A2 - Koehne, J.

A2 - Kostecki, R.

A2 - Krumdick, G.

A2 - Kulesza, P. J.

A2 - Leddy, J.

A2 - Lee, J. J.

A2 - Leonte, O.

A2 - Lu, Y. C.

A2 - Lucht, B. L.

A2 - Lynch, R. P.

A2 - Manivannan, M.

A2 - Mantz, R. A.

A2 - Marcus, P.

A2 - Maurice, V.

A2 - Mauter, M.

A2 - Mauzeroll, J.

A2 - McMurray, H. N.

A2 - Meng, Y. S.

A2 - Miller, E. L.

A2 - Milosev, I.

A2 - Minteer, S. D.

A2 - Mitra, S.

A2 - Mukerjee, S.

A2 - Mukundan, R.

A2 - Muldoon, J.

A2 - Nagahara, L.

A2 - Narayan, S. R.

A2 - Natishan, P. M.

A2 - Navaei, M.

A2 - Nicholas, J. D.

A2 - Noel, J.

A2 - Nonnenmann, S. S.

A2 - O'Dwyer, C.

A2 - Orazem, M. E.

A2 - Oren, Y.

A2 - Park, J. G.

A2 - Pharkya, P.

A2 - Pintauro, P. N.

A2 - Pylypenko, S.

A2 - Rajeshwar, K.

A2 - Ramasamy, R. P.

A2 - Rhodes, C.

A2 - Riemer, D. P.

A2 - Roeper, D.

A2 - Rohwerder, M.

A2 - Romankiw, L.

A2 - Rotkin, S. V.

A2 - Rupp, J. L. M.

A2 - Sailor, M. J.

A2 - Schwartz, D. T.

A2 - Sekhar, P. K.

A2 - Sharma, N.

A2 - Simonian, A.

A2 - Smith, D. K.

A2 - Smith, K. C.

A2 - Soleymani, L.

A2 - Stafford, G. R.

A2 - Staser, J. A.

A2 - Subramanian, V.

A2 - Subramanian, V. R.

A2 - Sundaram, K. B.

A2 - Suroviec, A. H.

A2 - Suto, K.

A2 - Tao, M.

A2 - Tatsuma, T.

A2 - Trulove, P. C.

A2 - Vanysek, P.

A2 - Vasiljevic, N.

A2 - Vaughey, J. T.

A2 - Virtanen, S.

A2 - Wang, H.

A2 - Wang, W.

A2 - Whitacre, J. F.

A2 - Williams, G.

A2 - Winter, M.

A2 - Wood, D. L.

A2 - Wu, G.

A2 - Wu, N.

A2 - Xiao, J.

A2 - Xing, Y.

A2 - Xu, H.

A2 - Yang, J. J.

A2 - Zangari, G.

PB - Electrochemical Society Inc.

T2 - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -

Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering

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