Abstract
We report the observation of boundary scattering in damage-free wires made from InAs/GaSb quantum wells. Fabrication of very long wires has enabled us to observe boundary scattering contribution to the resistivity of these wires both with and without a magnetic field. A very well-defined region of suppression of both field-induced and zero-field boundary scattering was observed. These effects were seen to become more pronounced as the width of the wires was reduced. Differences from boundary scattering in GaAs/AlGaAs heterostructure wires are pointed out. Results of a study of the dependence of boundary scattering on temperature are also described.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 478-483 |
| Number of pages | 6 |
| Journal | Semiconductor Science and Technology |
| Volume | 14 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Fingerprint
Dive into the research topics of 'Boundary scattering in wet-etched InAs/GaSb heterostructure wires: With and without magnetic field'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS