Beating of the shubnikov-de haas oscillations in GaAs/AlGaAs quantum-dot arrays

Yuichi Ochiai; Nobuyuki Aoki; Li Hung Lln; Anthony Andresen; Chetan Prasad; G. E. Fuding; Jonathan P. Bird; David K. Ferry; Tomomitu Risaki; Kohji Ishibashi; Yoshinobu Aoyagi; Takuo Sugano

doi:10.1143/jjap.40.1990

Beating of the shubnikov-de haas oscillations in GaAs/AlGaAs quantum-dot arrays

Yuichi Ochiai, Nobuyuki Aoki, Li Hung Lln, Anthony Andresen, Chetan Prasad, G. E. Fuding, Jonathan P. Bird, David K. Ferry, Tomomitu Risaki, Kohji Ishibashi, Yoshinobu Aoyagi, Takuo Sugano

Research output: Contribution to journal › Article › peer-review

Abstract

The Shubnikov-de Haas oscillations measured in split-gate quantum-dot arrays are found to exhibit a marked beating behavior, which we attribute to a carrier density variation between the quantum-point-contact leads and the component dots of the array. A simple analysis supports these arguments, revealing that the carrier density in the quantum point contacts vanishes as the array is pinched off. The beating may be suppressed by increasing the measurement current, a behavior which we attribute to the injection of energetic electrons in the source into initially unoccupied Landau levels in the quantum point contacts.

Original language	English (US)
Pages (from-to)	1990-1993
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.40.1990
State	Published - 2001

Keywords

Localization
Quantum dots
Quantum-dot arrays
Shubnikov-de haas effect

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.1990

Cite this

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title = "Beating of the shubnikov-de haas oscillations in GaAs/AlGaAs quantum-dot arrays",

abstract = "The Shubnikov-de Haas oscillations measured in split-gate quantum-dot arrays are found to exhibit a marked beating behavior, which we attribute to a carrier density variation between the quantum-point-contact leads and the component dots of the array. A simple analysis supports these arguments, revealing that the carrier density in the quantum point contacts vanishes as the array is pinched off. The beating may be suppressed by increasing the measurement current, a behavior which we attribute to the injection of energetic electrons in the source into initially unoccupied Landau levels in the quantum point contacts.",

keywords = "Localization, Quantum dots, Quantum-dot arrays, Shubnikov-de haas effect",

author = "Yuichi Ochiai and Nobuyuki Aoki and Lln, {Li Hung} and Anthony Andresen and Chetan Prasad and Fuding, {G. E.} and Bird, {Jonathan P.} and Ferry, {David K.} and Tomomitu Risaki and Kohji Ishibashi and Yoshinobu Aoyagi and Takuo Sugano",

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doi = "10.1143/jjap.40.1990",

language = "English (US)",

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journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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publisher = "Japan Society of Applied Physics",

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T1 - Beating of the shubnikov-de haas oscillations in GaAs/AlGaAs quantum-dot arrays

AU - Ochiai, Yuichi

AU - Aoki, Nobuyuki

AU - Lln, Li Hung

AU - Andresen, Anthony

AU - Prasad, Chetan

AU - Fuding, G. E.

AU - Bird, Jonathan P.

AU - Ferry, David K.

AU - Risaki, Tomomitu

AU - Ishibashi, Kohji

AU - Aoyagi, Yoshinobu

AU - Sugano, Takuo

PY - 2001

Y1 - 2001

N2 - The Shubnikov-de Haas oscillations measured in split-gate quantum-dot arrays are found to exhibit a marked beating behavior, which we attribute to a carrier density variation between the quantum-point-contact leads and the component dots of the array. A simple analysis supports these arguments, revealing that the carrier density in the quantum point contacts vanishes as the array is pinched off. The beating may be suppressed by increasing the measurement current, a behavior which we attribute to the injection of energetic electrons in the source into initially unoccupied Landau levels in the quantum point contacts.

AB - The Shubnikov-de Haas oscillations measured in split-gate quantum-dot arrays are found to exhibit a marked beating behavior, which we attribute to a carrier density variation between the quantum-point-contact leads and the component dots of the array. A simple analysis supports these arguments, revealing that the carrier density in the quantum point contacts vanishes as the array is pinched off. The beating may be suppressed by increasing the measurement current, a behavior which we attribute to the injection of energetic electrons in the source into initially unoccupied Landau levels in the quantum point contacts.

KW - Localization

KW - Quantum dots

KW - Quantum-dot arrays

KW - Shubnikov-de haas effect

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DO - 10.1143/jjap.40.1990

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JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 B

ER -

Beating of the shubnikov-de haas oscillations in GaAs/AlGaAs quantum-dot arrays

Abstract

Keywords

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