@article{1efa91a5da6347f48d7724a109dd2852,
title = "Band edge exciton states in AlN single crystals and epitaxial layers",
abstract = "The band-edge excitonic properties of AlN are investigated using low-temperamre (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations.",
author = "L. Chen and Brian Skromme and Dalmau, \{R. F.\} and R. Schlesser and Z. Sitar and C. Chen and W. Sun and J. Yang and Khan, \{M. A.\} and Nakarmi, \{M. L.\} and Lin, \{J. Y.\} and Jiang, \{H. X.\}",
note = "Funding Information: The work at Arizona State University and NCSU was supported by the Office of Naval Research Multidisciplinary University Research Initiative on III-Nitride Crystal Growth and Wafering, Grant No. N00014-01-1-0716, monitored by Dr. C. E. C. Wood. The work at KSU was supported by NSF (DMR-0203373) and DOE (Grant No. DEFG0396ER45604 A005). The authors thank T. L. Groy for performing and analyzing the Laue x-ray diffraction experiments.",
year = "2004",
month = nov,
day = "8",
doi = "10.1063/1.1818733",
language = "English (US)",
volume = "85",
pages = "4334--4336",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "19",
}