Band alignment at the CdTe/InSb (001) heterointerface

Xingye Wang; Calli Campbell; Yong Hang Zhang; Robert J. Nemanich

doi:10.1116/1.5022799

Band alignment at the CdTe/InSb (001) heterointerface

Xingye Wang, Calli Campbell, Yong Hang Zhang, Robert J. Nemanich

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. In this research, molecular beam epitaxy was used to deposit a ∼5 nm epitaxial CdTe (001) layer on an InSb (001) surface. Monochromatic x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy were used to characterize the electronic states of clean InSb and CdTe surfaces and CdTe/InSb (001) heterostructures. A room temperature remote hydrogen-plasma process was used to clean the surfaces prior to characterization. The results indicate a valence band offset of 0.89 eV and a type-I (straddling gap) alignment for the CdTe/InSb (001) heterostructure interface. In addition, In-Te bonding was observed at the interface. Downward band bending of the InSb is attributed to excess electrons introduced by nonoctal In-Te interface bonding.

Original language	English (US)
Article number	031101
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	36
Issue number	3
DOIs	https://doi.org/10.1116/1.5022799
State	Published - May 1 2018

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.5022799

Cite this

@article{3622375352844cc4847dd7eaf400fc1d,

title = "Band alignment at the CdTe/InSb (001) heterointerface",

abstract = "CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. In this research, molecular beam epitaxy was used to deposit a ∼5 nm epitaxial CdTe (001) layer on an InSb (001) surface. Monochromatic x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy were used to characterize the electronic states of clean InSb and CdTe surfaces and CdTe/InSb (001) heterostructures. A room temperature remote hydrogen-plasma process was used to clean the surfaces prior to characterization. The results indicate a valence band offset of 0.89 eV and a type-I (straddling gap) alignment for the CdTe/InSb (001) heterostructure interface. In addition, In-Te bonding was observed at the interface. Downward band bending of the InSb is attributed to excess electrons introduced by nonoctal In-Te interface bonding.",

author = "Xingye Wang and Calli Campbell and Zhang, {Yong Hang} and Nemanich, {Robert J.}",

note = "Funding Information: This research was supported through the National Science Foundation under Grant No. DMR-1206935, the Department of Energy Bay Area Photovoltaic Consortium (BAPVC) under Award No. DE-EE0004946, and the Air Force Office of Scientific Research (AFOSR) Grant No. FA9550-15-1-0196. Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = may,

day = "1",

doi = "10.1116/1.5022799",

language = "English (US)",

volume = "36",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Band alignment at the CdTe/InSb (001) heterointerface

AU - Wang, Xingye

AU - Campbell, Calli

AU - Zhang, Yong Hang

AU - Nemanich, Robert J.

N1 - Funding Information: This research was supported through the National Science Foundation under Grant No. DMR-1206935, the Department of Energy Bay Area Photovoltaic Consortium (BAPVC) under Award No. DE-EE0004946, and the Air Force Office of Scientific Research (AFOSR) Grant No. FA9550-15-1-0196. Publisher Copyright: © 2018 Author(s).

PY - 2018/5/1

Y1 - 2018/5/1

N2 - CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. In this research, molecular beam epitaxy was used to deposit a ∼5 nm epitaxial CdTe (001) layer on an InSb (001) surface. Monochromatic x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy were used to characterize the electronic states of clean InSb and CdTe surfaces and CdTe/InSb (001) heterostructures. A room temperature remote hydrogen-plasma process was used to clean the surfaces prior to characterization. The results indicate a valence band offset of 0.89 eV and a type-I (straddling gap) alignment for the CdTe/InSb (001) heterostructure interface. In addition, In-Te bonding was observed at the interface. Downward band bending of the InSb is attributed to excess electrons introduced by nonoctal In-Te interface bonding.

AB - CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. In this research, molecular beam epitaxy was used to deposit a ∼5 nm epitaxial CdTe (001) layer on an InSb (001) surface. Monochromatic x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy were used to characterize the electronic states of clean InSb and CdTe surfaces and CdTe/InSb (001) heterostructures. A room temperature remote hydrogen-plasma process was used to clean the surfaces prior to characterization. The results indicate a valence band offset of 0.89 eV and a type-I (straddling gap) alignment for the CdTe/InSb (001) heterostructure interface. In addition, In-Te bonding was observed at the interface. Downward band bending of the InSb is attributed to excess electrons introduced by nonoctal In-Te interface bonding.

UR - http://www.scopus.com/inward/record.url?scp=85045262063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045262063&partnerID=8YFLogxK

U2 - 10.1116/1.5022799

DO - 10.1116/1.5022799

M3 - Article

AN - SCOPUS:85045262063

SN - 0734-2101

VL - 36

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

M1 - 031101

ER -

Band alignment at the CdTe/InSb (001) heterointerface

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this