AUTOMATIC MEASUREMENT OF MINORITY CARRIER LIFETIMES IN SILICON FOR NONUNIFORM DOPED SAMPLES USING THE ZERBST METHOD.

Ian G. McGillivray; John M. Robertson; Anthony J. Walton

doi:10.1049/ip-i-1.1987.0032

AUTOMATIC MEASUREMENT OF MINORITY CARRIER LIFETIMES IN SILICON FOR NONUNIFORM DOPED SAMPLES USING THE ZERBST METHOD.

Ian G. McGillivray, John M. Robertson, Anthony J. Walton

Arizona State University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniformly and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained.

Original language	English (US)
Pages (from-to)	161-167
Number of pages	7
Journal	IEE Proceedings I: Solid State and Electron Devices
Volume	134
Issue number	6
DOIs	https://doi.org/10.1049/ip-i-1.1987.0032
State	Published - Jan 1 1987

ASJC Scopus subject areas

General Engineering

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abstract = "One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniformly and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained.",

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AB - One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniformly and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained.

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AUTOMATIC MEASUREMENT OF MINORITY CARRIER LIFETIMES IN SILICON FOR NONUNIFORM DOPED SAMPLES USING THE ZERBST METHOD.

Abstract

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