Atomic force nanolithography of InP for site control growth of InAs nanostructures

H. D. Fonseca-Filho; R. Prioli; M. P. Pires; A. S. Lopes; P. L. Souza; Fernando Ponce

doi:10.1063/1.2430039

Atomic force nanolithography of InP for site control growth of InAs nanostructures

H. D. Fonseca-Filho
, R. Prioli
, M. P. Pires
, A. S. Lopes
, P. L. Souza
, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A combination of atomic force nanolithography and metal organic vapor phase epitaxy has been used to control the nucleation of InAs nanostructures on InP substrates. Pits with controlled width and depth were produced on InP with the use of atomic force nanolithography. The number of nucleated nanostructures depends on the applied force and is independent of the geometry of the pits. Study shows that the density of crystalline defects introduced by nanoindentation is responsible for the number of nucleated nanostructures.

Original language	English (US)
Article number	013117
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2430039
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2430039

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@article{7fa65f6a6d834995a193d8b8582cfe4c,

title = "Atomic force nanolithography of InP for site control growth of InAs nanostructures",

abstract = "A combination of atomic force nanolithography and metal organic vapor phase epitaxy has been used to control the nucleation of InAs nanostructures on InP substrates. Pits with controlled width and depth were produced on InP with the use of atomic force nanolithography. The number of nucleated nanostructures depends on the applied force and is independent of the geometry of the pits. Study shows that the density of crystalline defects introduced by nanoindentation is responsible for the number of nucleated nanostructures.",

author = "Fonseca-Filho, \{H. D.\} and R. Prioli and Pires, \{M. P.\} and Lopes, \{A. S.\} and Souza, \{P. L.\} and Fernando Ponce",

note = "Funding Information: This work was partially supported by the Brazilian Agencies: Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico (CNPq) and Funda{\c c}{\~a}o Carlos Chagas Filho de Amparo {\`a} Pesquisa do Estado do Rio de Janeiro (FAPERJ). The authors gratefully acknowledge assistance by S. Myhajlenko and M. Stevens with the microscopy at ASU.",

year = "2007",

doi = "10.1063/1.2430039",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Atomic force nanolithography of InP for site control growth of InAs nanostructures

AU - Fonseca-Filho, H. D.

AU - Prioli, R.

AU - Pires, M. P.

AU - Lopes, A. S.

AU - Souza, P. L.

AU - Ponce, Fernando

N1 - Funding Information: This work was partially supported by the Brazilian Agencies: Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) and Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ). The authors gratefully acknowledge assistance by S. Myhajlenko and M. Stevens with the microscopy at ASU.

PY - 2007

Y1 - 2007

N2 - A combination of atomic force nanolithography and metal organic vapor phase epitaxy has been used to control the nucleation of InAs nanostructures on InP substrates. Pits with controlled width and depth were produced on InP with the use of atomic force nanolithography. The number of nucleated nanostructures depends on the applied force and is independent of the geometry of the pits. Study shows that the density of crystalline defects introduced by nanoindentation is responsible for the number of nucleated nanostructures.

AB - A combination of atomic force nanolithography and metal organic vapor phase epitaxy has been used to control the nucleation of InAs nanostructures on InP substrates. Pits with controlled width and depth were produced on InP with the use of atomic force nanolithography. The number of nucleated nanostructures depends on the applied force and is independent of the geometry of the pits. Study shows that the density of crystalline defects introduced by nanoindentation is responsible for the number of nucleated nanostructures.

UR - https://www.scopus.com/pages/publications/33846038706

UR - https://www.scopus.com/pages/publications/33846038706#tab=citedBy

U2 - 10.1063/1.2430039

DO - 10.1063/1.2430039

M3 - Article

AN - SCOPUS:33846038706

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013117

ER -

Atomic force nanolithography of InP for site control growth of InAs nanostructures

Abstract

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