Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors

C. Dehoff; B. J. Rodriguez; A. I. Kingon; R. J. Nemanich; A. Gruverman; J. S. Cross

doi:10.1063/1.1850652

Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors

C. Dehoff, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, A. Gruverman, J. S. Cross

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

This article describes an experimental setup for combined measurements of domain switching dynamics and switching currents in micrometer scale ferroelectric capacitors. The setup is based on a commercial atomic force microscope (AFM) that is equipped with a piezoresponse mode for domain imaging and with a wide bandwidth current amplifier for switching current recording. The setup allows combined domain/current measurements in capacitors as small as 1 μm ² with switching times resolved down to 10 ns. The incorporation of switching current measurement capability into piezoresponse AFM makes detailed analysis of switching behavior in ferroelectric memory devices possible.

Original language	English (US)
Article number	023708
Pages (from-to)	023708-1-023708-5
Journal	Review of Scientific Instruments
Volume	76
Issue number	2
DOIs	https://doi.org/10.1063/1.1850652
State	Published - Jan 25 2005
Externally published	Yes

ASJC Scopus subject areas

Instrumentation

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10.1063/1.1850652

Cite this

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title = "Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors",

abstract = "This article describes an experimental setup for combined measurements of domain switching dynamics and switching currents in micrometer scale ferroelectric capacitors. The setup is based on a commercial atomic force microscope (AFM) that is equipped with a piezoresponse mode for domain imaging and with a wide bandwidth current amplifier for switching current recording. The setup allows combined domain/current measurements in capacitors as small as 1 μm 2 with switching times resolved down to 10 ns. The incorporation of switching current measurement capability into piezoresponse AFM makes detailed analysis of switching behavior in ferroelectric memory devices possible.",

author = "C. Dehoff and Rodriguez, {B. J.} and Kingon, {A. I.} and Nemanich, {R. J.} and A. Gruverman and Cross, {J. S.}",

note = "Funding Information: The authors are grateful to Dr. I. Stolichnov for discussions related to switching current measurements. This study is supported by the National Science Foundation (Grant No. DMR-0235632) and by the U.S.-Israel Bilateral Science Foundation (BSF) and Fujitsu Limited.",

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AU - Rodriguez, B. J.

AU - Kingon, A. I.

AU - Nemanich, R. J.

AU - Gruverman, A.

AU - Cross, J. S.

N1 - Funding Information: The authors are grateful to Dr. I. Stolichnov for discussions related to switching current measurements. This study is supported by the National Science Foundation (Grant No. DMR-0235632) and by the U.S.-Israel Bilateral Science Foundation (BSF) and Fujitsu Limited.

PY - 2005/1/25

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N2 - This article describes an experimental setup for combined measurements of domain switching dynamics and switching currents in micrometer scale ferroelectric capacitors. The setup is based on a commercial atomic force microscope (AFM) that is equipped with a piezoresponse mode for domain imaging and with a wide bandwidth current amplifier for switching current recording. The setup allows combined domain/current measurements in capacitors as small as 1 μm 2 with switching times resolved down to 10 ns. The incorporation of switching current measurement capability into piezoresponse AFM makes detailed analysis of switching behavior in ferroelectric memory devices possible.

AB - This article describes an experimental setup for combined measurements of domain switching dynamics and switching currents in micrometer scale ferroelectric capacitors. The setup is based on a commercial atomic force microscope (AFM) that is equipped with a piezoresponse mode for domain imaging and with a wide bandwidth current amplifier for switching current recording. The setup allows combined domain/current measurements in capacitors as small as 1 μm 2 with switching times resolved down to 10 ns. The incorporation of switching current measurement capability into piezoresponse AFM makes detailed analysis of switching behavior in ferroelectric memory devices possible.

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Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors

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