Atomic arrangement at the AIN/Si (111) interface

R. Liu; Fernando Ponce; A. Dadgar; A. Krost

doi:10.1063/1.1597749

Atomic arrangement at the AIN/Si (111) interface

R. Liu
, Fernando Ponce
, A. Dadgar
, A. Krost

Physics

Research output: Contribution to journal › Article › peer-review

139 Scopus citations

Abstract

A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

Original language	English (US)
Pages (from-to)	860-862
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1597749
State	Published - Aug 4 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1597749

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title = "Atomic arrangement at the AIN/Si (111) interface",

abstract = "A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.",

author = "R. Liu and Fernando Ponce and A. Dadgar and A. Krost",

year = "2003",

month = aug,

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T1 - Atomic arrangement at the AIN/Si (111) interface

AU - Liu, R.

AU - Ponce, Fernando

AU - Dadgar, A.

AU - Krost, A.

PY - 2003/8/4

Y1 - 2003/8/4

N2 - A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

AB - A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

UR - https://www.scopus.com/pages/publications/0042378607

UR - https://www.scopus.com/pages/publications/0042378607#tab=citedBy

U2 - 10.1063/1.1597749

DO - 10.1063/1.1597749

M3 - Article

AN - SCOPUS:0042378607

SN - 0003-6951

VL - 83

SP - 860

EP - 862

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Atomic arrangement at the AIN/Si (111) interface

Abstract

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