@inproceedings{f81ec31e525c42ecb8578fab8cfb90bc,
title = "Arsenic precipitation in GaAs for single-electron tunneling applications",
abstract = "Compositional control of precipitate position by preferential precipitation in a GaAs well sandwiched between low-temperature grown AlGaAs arsenic supply layers is examined for single-electron tunneling applications, where closely spaced particles a few nanometers in diameter are required. Control of small particles formed at low annealing temperatures where positional control is expected to be more difficult is examined. The use of a superlattice supply layer to intentionally increase the arsenic diffusion from the AlGaAs into the GaAs well is also examined. The results suggest useful directions for realizing controlled precipitation at scales of interest for single-electron tunneling applications.",
author = "Hung, {C. Y.} and Harris, {J. S.} and Marshall, {A. F.} and Kiehl, {R. A.}",
note = "Funding Information: This work was supported by ONWARPA through contract N00014-96-1-0983. Laboratories, Ltd. is also gratefully acknowledged. Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
year = "1997",
doi = "10.1109/ISCS.1998.711598",
language = "English (US)",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "135--138",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
}