Application of a boron source diffusion barrer for the fabrication of back contact silicon solar cells

Peter Hacke, James M. Gee, Michael W. Sumner, Jalal Salami, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


Interdigitated back contact and emitter wrap-through solar cells were fabricated using a diffusion barrier to achieve selective phosphorus diffusion for the patterning of the base and the emitter regions on the cell rear. The addition of boron to the diffusion barrier for emitter formation in the underlying n-type base and for the formation of a back surface field in the case of a p-type base was further examined. Boron was successfully incorporated into the n-type Si for the creation of rear p + emitters in an interdigitated back contact cell. An order of magnitude improvement in the surface recombination velocity to 10 3 cm/s could be achieved with a p + surface field applied to the base of p-type wafers. Incorporating this technology, best multi-crystalline emitter wrap-through cell performance could be gained with a 1 k-2k Ω/□ surface field; however, the characteristics were rapidly dominated by increased saturation current as the surface field layer concentration was increased.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Number of pages4
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005


Other31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering


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