Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers

N. Newman, K. K. Chin, W. G. Petro, T. Kendelewicz, M. D. Williams, C. E. McCants, W. E. Spicer

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing Ag, Al, and Au on n-type (110)GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. PES was used to monitor the annealing-induced changes in the interface Fermi level position and the chemical nature of the metal-semiconductor interface for submonolayer and several monolayer coverages. Barrier height determinations were also performed using current-voltage (/-F) and capacitance-voltage (C-V) device measurements on annealed thick metal film metal-semiconductor junctions. The results of this study show that the annealing-induced microscopic changes in the electronic and chemical structure of the metal-semiconductor interface can be strongly correlated with the macroscopic changes in the electrical properties of thick film metal-semiconductor Schottkv diodes.

Original languageEnglish (US)
Pages (from-to)996-1001
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1985
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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