Annealing and Hydrogenation of GaNP Lattice Matched to Si

Nicholas P. Irvin, Hadi Afshari, Chaomin Zhang, Srinath Murali, Daniel Peirano Petit, Abhinav Chikhalkar, Khalid Hossain, Chris T. Gregory, Richard R. King, Ian R. Sellers, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


GaN0.02P0.98 is a promising top junction material for a Si-based tandem solar cell, offering the correct lattice constant and bandgap for an optimal three-terminal device. A key challenge for dilute nitride materials is achieving sufficiently high carrier lifetimes. This paper presents a detailed investigation of the carrier lifetimes in GaNP lattice matched to Si as well as a novel hydrogenation treatment. The lifetimes are over 20 ns at 10K, but the TRPL signal becomes undetectable at 140K due to increased nonradiative recombination. While annealing boosts the carrier lifetime, subsequent hydrogenation was seen to neither increase nor decrease lifetime.

Original languageEnglish (US)
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781665419222
StatePublished - Jun 20 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: Jun 20 2021Jun 25 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale


  • GaNP
  • Si-based tandem solar cells
  • TRPL
  • annealing
  • dilute nitrides
  • hydrogenation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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