Abstract
The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a `sin 2ψ' technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of approximately 320 MPa in the film plane was determined.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | MRS |
| Pages | 293-298 |
| Number of pages | 6 |
| Volume | 472 |
| State | Published - 1997 |
| Event | Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 1 1997 → Apr 4 1997 |
Other
| Other | Proceedings of the 1997 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/1/97 → 4/4/97 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials