9 Scopus citations


Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.

Original languageEnglish (US)
Pages (from-to)1106-1110
Number of pages5
JournalSemiconductor Science and Technology
Issue number10
StatePublished - Oct 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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