An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation

Shimeng Yu, Yi Wu, Rakesh Jeyasingh, Duygu Kuzum, H. S.Philip Wong

Research output: Contribution to journalArticlepeer-review

648 Scopus citations


The multilevel capability of metal oxide resistive switching memory was explored for the potential use as a single-element electronic synapse device. TiN/HfOx/AlO}x/Pt resistive switching cells were fabricated. Multilevel resistance states were obtained by varying the programming voltage amplitudes during the pulse cycling. The cell conductance could be continuously increased or decreased from cycle to cycle, and about 105 endurance cycles were obtained. Nominal energy consumption per operation is in the subpicojoule range with a maximum measured value of 6 pJ. This low energy consumption is attractive for the large-scale hardware implementation of neuromorphic computing and brain simulation. The property of gradual resistance change by pulse amplitudes was exploited to demonstrate the spike-timing-dependent plasticity learning rule, suggesting that metal oxide memory can potentially be used as an electronic synapse device for the emerging neuromorphic computation system.

Original languageEnglish (US)
Article number5872020
Pages (from-to)2729-2737
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - Aug 2011
Externally publishedYes


  • Bio-inspired system
  • neuromorphic computation
  • resistive switching memory
  • spike-timing-dependent plasticity (STDP)
  • synapse

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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