An Effective Potential Approach to Modeling 25 nm MOSFET Devices

S. Ahmed, C. Ringhofer, D. Vasileska

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.

Original languageEnglish (US)
Pages (from-to)113-117
Number of pages5
JournalJournal of Computational Electronics
Issue number2-4
StatePublished - Dec 1 2003


  • effective potentials
  • quantum thermodynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


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