Abstract
We consider a model for chemical vapor deposition, the process of adsorption of gas onto a surface together with the associated deposition of a chemical reactant on the surface. The surface has a microscopic structure which, in the context of semiconductor manufacturing, arises from a preprocessing of the semiconductor wafer. Using singular perturbation analysis, a boundary condition for the corresponding diffusion equation is derived, which allows for the replacement of the microstructured surface by a flat boundary. The asymptotic analysis is numerically verified with a simple test example.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 737-752 |
| Number of pages | 16 |
| Journal | SIAM Journal on Applied Mathematics |
| Volume | 58 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1998 |
Keywords
- Asymptotic analysis
- Chemically reacting flows
- Homogenization
- Mass transfer
- Microstructured surfaces
- Partial differential equations
- Singular perturbation
- Time-dependent initial-boundary value problem
ASJC Scopus subject areas
- Applied Mathematics
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