An area and power efficient radiation hardened by design flip-flop

Jonathan E. Knudsen; Lawrence T. Clark

doi:10.1109/TNS.2006.886199

An area and power efficient radiation hardened by design flip-flop

Jonathan E. Knudsen, Lawrence T. Clark

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

A radiation hardened by design flip-flop with high single event effect immunity is described. Circuit size and power are reduced by a combination of proven SEE hard techniques, i.e., a temporal latch master and DICE slave are used. Two shift register chains each comprised of 1920 flip-flops have been implemented in the IBM 0.13 μm bulk CMOS process. Measured SEE immunity in accelerated heavy ion testing, and power results are described. A threshold LET over 45 LET (MeV-cm²/mg) at Y_DD = 1.5 V is demonstrated. High layout density and the likely high LET failure mechanisms are described.

Original language	English (US)
Pages (from-to)	3392-3399
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	53
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2006.886199
State	Published - Dec 2006

Keywords

Flip-flop
Radiation hardened by design
Sequential logic circuits
Single event effects
Single event transients

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2006.886199

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title = "An area and power efficient radiation hardened by design flip-flop",

abstract = "A radiation hardened by design flip-flop with high single event effect immunity is described. Circuit size and power are reduced by a combination of proven SEE hard techniques, i.e., a temporal latch master and DICE slave are used. Two shift register chains each comprised of 1920 flip-flops have been implemented in the IBM 0.13 μm bulk CMOS process. Measured SEE immunity in accelerated heavy ion testing, and power results are described. A threshold LET over 45 LET (MeV-cm2/mg) at YDD = 1.5 V is demonstrated. High layout density and the likely high LET failure mechanisms are described.",

keywords = "Flip-flop, Radiation hardened by design, Sequential logic circuits, Single event effects, Single event transients",

author = "Knudsen, {Jonathan E.} and Clark, {Lawrence T.}",

note = "Funding Information: Manuscript received July 14, 2006 and revised September 5, 2006. This work was supported by USAF/VSSE, Albuquerque, NM, under Contract F29601-02-2-299. The authors are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: Jonathan.Knudsen@asu.edu; Lawrence.Clark@asu.edu). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2006.886199",

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AU - Clark, Lawrence T.

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KW - Single event effects

KW - Single event transients

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An area and power efficient radiation hardened by design flip-flop

Abstract

Keywords

ASJC Scopus subject areas

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