Keyphrases
Access Region
25%
Aluminum Gallium Nitride (AlGaN)
25%
Analytic Expression
25%
Analytic Model
50%
Bias Conditions
25%
Channel Length
25%
Charge Calculation
25%
Current-voltage
25%
Current-voltage Model
100%
DC Current
25%
Empiricism
25%
GaN HEMT
75%
Gate Length
25%
High Electron Mobility Transistor
100%
Hydrodynamic Simulation
25%
III-nitrides
100%
InAlN
25%
InGaN Back-barrier
25%
Joule Heating
25%
Landauer
25%
Model Experimental
25%
Negative Momentum
25%
Non-self
25%
Nonlinearity
25%
Numerical Results
25%
Output Conductance
25%
Output Current
25%
Pulsed IV Measurement
25%
Quasi-ballistic
100%
Self-aligned
25%
T Gate
25%
Temperature Conditions
25%
Temperature-dependent Thermal Conductivity
25%
Terminal Voltage
25%
Theory Calculation
25%
Transconductance
25%
Transistor Model
25%
Transport Theory
25%
Two Dimensional
25%
Engineering
Access Region
50%
Broad Range
50%
Channel Length
50%
Current Output
50%
Direct Current
50%
Electrostatic Force
50%
Experimental Model
50%
Gate Length
50%
Hydrodynamics
50%
Input Parameter
50%
Nitride
100%
Nonlinearity
50%
Resistance Heating
50%
Temperature Condition
50%
Terminal Voltage
50%
Thermal Conductivity
50%
Two Dimensional
50%
Material Science
Electron Mobility
100%
Hydrodynamics
14%
Nitride Compound
100%
Thermal Conductivity
14%
Transistor
100%
Earth and Planetary Sciences
Direct Current
14%
Electrostatic Force
14%
High Electron Mobility Transistors
100%
Nitride
100%
Nonlinearity
14%
Thermal Conductivity
14%
Transconductance
14%
Transport Theory
14%
Chemical Engineering
Joule Heating
50%
Nitride
100%
Thermal Conductivity
50%