AlAs/AlGaAs X-valley multiquantum-well detectors grown on Si substrate are reported. Normal-incidence infrared-absorption measurements were performed on - and -oriented samples grown on Si substrate at a wavelength range of 5-20 μm. An absorption peak was observed in the -oriented quantum wells with an infrared-absorption coefficient of α=1400 cm-1 (quantum efficiency η=13%); similar results were attained with the  sample. The experimental results indicate the potential of these novel structures as normal-incidence infrared photodetectors. The results point to the possibility of integrating photodetectors and signal processing circuits on the same Si substrate.
ASJC Scopus subject areas
- General Physics and Astronomy