A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent VT for traps located near the source of the MOSFET device with 32-nm effective channel length.
- Random dopant fluctuations (RDFs)
- random interface trap
- short-range Coulomb interaction
- threshold voltage variation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering