@inproceedings{e6c1f03ca2d04ef4ab88872b2b878b6a,
title = "Accelerated BTI degradation under stochastic TDDB effect",
abstract = "The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. This work confirms the correlation with 28nm measurement data. Based on stochastic trapping/detrapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. The contributions of this work include: (1) Derivation of BTI models with added TDDB impact, (2) Providing test results for calibration of model parameters, and (3) Presenting device models and simulation results for circuits. At circuit level, incorporating these models illustrates a significant increase in failure rate due to accelerated BTI.",
keywords = "Accelerated aging, BTI, TDDB, Trapping/detrapping, circuit simulation",
author = "Devyani Patra and Reza, {Ahmed Kamal} and Mehdi Katoozi and Cannon, {Ethan H.} and Kaushik Roy and Yu Cao",
note = "Funding Information: This work was supported in part by DARPA contract HR0011-16-C-0041. The views, opinions, and/or findings expressed are those of the author(s) and should not be interpreted as representing the official views or policies of the Department of Defense or the U.S. Government. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353616",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5C.51--5C.54",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
}