A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

Chih Yang Lin; Ying Chen Chen; Meiqi Guo; Chih Hung Pan; Fu Yuan Jin; Yi Ting Tseng; Cheng Chih Hsieh; Xiaohan Wu; Min Chen Chen; Yao Feng Chang; Fei Zhou; Burt Fowler; Kuan Chang Chang; Tsung Ming Tsai; Ting Chang Chang; Yonggang Zhao; Simon M. Sze; Sanjay Banerjee; Jack C. Lee

doi:10.1109/VLSI-TSA.2017.7942474

A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

Chih Yang Lin, Ying Chen Chen, Meiqi Guo, Chih Hung Pan, Fu Yuan Jin, Yi Ting Tseng, Cheng Chih Hsieh, Xiaohan Wu, Min Chen Chen, Yao Feng Chang, Fei Zhou, Burt Fowler, Kuan Chang Chang, Tsung Ming Tsai, Ting Chang Chang, Yonggang Zhao, Simon M. Sze, Sanjay Banerjee, Jack C. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ('seasoning effect'). Compatible current density (10⁷∼10⁹ A/cm²) and selectivity (∼100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.

Original language	English (US)
Title of host publication	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509058051
DOIs	https://doi.org/10.1109/VLSI-TSA.2017.7942474
State	Published - Jun 7 2017
Externally published	Yes
Event	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan, Province of China Duration: Apr 24 2017 → Apr 27 2017

Publication series

Name	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/24/17 → 4/27/17

Keywords

Selector
Threshold Switching
VO

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/VLSI-TSA.2017.7942474

Cite this

Lin, C. Y., Chen, Y. C., Guo, M., Pan, C. H., Jin, F. Y., Tseng, Y. T., Hsieh, C. C., Wu, X., Chen, M. C., Chang, Y. F., Zhou, F., Fowler, B., Chang, K. C., Tsai, T. M., Chang, T. C., Zhao, Y., Sze, S. M., Banerjee, S., & Lee, J. C. (2017). A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 Article 7942474 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942474

A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector. / Lin, Chih Yang; Chen, Ying Chen; Guo, Meiqi et al.
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942474 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY, Chen, YC, Guo, M, Pan, CH, Jin, FY, Tseng, YT, Hsieh, CC, Wu, X, Chen, MC, Chang, YF, Zhou, F, Fowler, B, Chang, KC, Tsai, TM, Chang, TC, Zhao, Y, Sze, SM, Banerjee, S & Lee, JC 2017, A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector. in 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942474, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, Taiwan, Province of China, 4/24/17. https://doi.org/10.1109/VLSI-TSA.2017.7942474

Lin CY, Chen YC, Guo M, Pan CH, Jin FY, Tseng YT et al. A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942474. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). doi: 10.1109/VLSI-TSA.2017.7942474

Lin, Chih Yang ; Chen, Ying Chen ; Guo, Meiqi et al. / A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector. 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

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title = "A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector",

abstract = "For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ('seasoning effect'). Compatible current density (107∼109 A/cm2) and selectivity (∼100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.",

keywords = "Selector, Threshold Switching, VO",

author = "Lin, {Chih Yang} and Chen, {Ying Chen} and Meiqi Guo and Pan, {Chih Hung} and Jin, {Fu Yuan} and Tseng, {Yi Ting} and Hsieh, {Cheng Chih} and Xiaohan Wu and Chen, {Min Chen} and Chang, {Yao Feng} and Fei Zhou and Burt Fowler and Chang, {Kuan Chang} and Tsai, {Tsung Ming} and Chang, {Ting Chang} and Yonggang Zhao and Sze, {Simon M.} and Sanjay Banerjee and Lee, {Jack C.}",

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doi = "10.1109/VLSI-TSA.2017.7942474",

language = "English (US)",

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T1 - A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

AU - Lin, Chih Yang

AU - Chen, Ying Chen

AU - Guo, Meiqi

AU - Pan, Chih Hung

AU - Jin, Fu Yuan

AU - Tseng, Yi Ting

AU - Hsieh, Cheng Chih

AU - Wu, Xiaohan

AU - Chen, Min Chen

AU - Chang, Yao Feng

AU - Zhou, Fei

AU - Fowler, Burt

AU - Chang, Kuan Chang

AU - Tsai, Tsung Ming

AU - Chang, Ting Chang

AU - Zhao, Yonggang

AU - Sze, Simon M.

AU - Banerjee, Sanjay

AU - Lee, Jack C.

PY - 2017/6/7

Y1 - 2017/6/7

N2 - For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ('seasoning effect'). Compatible current density (107∼109 A/cm2) and selectivity (∼100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.

AB - For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ('seasoning effect'). Compatible current density (107∼109 A/cm2) and selectivity (∼100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.

KW - Selector

KW - Threshold Switching

KW - VO

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T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Y2 - 24 April 2017 through 27 April 2017

ER -

A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

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