A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

D. S. Jiang; Y. H. Zhang; C. Abraham; K. Syassen; J. B. Xia; K. Ploog

doi:10.1016/0749-6036(92)90351-5

A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

D. S. Jiang, Y. H. Zhang, C. Abraham, K. Syassen, J. B. Xia, K. Ploog

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Resonant Raman scattering is investigated on GaInAs/AlInAs multiple quantum well (MQW) heterostructures, lattice-matched to InP substrates. The resonance is realized at several fixed laser lines by varying the hydrostatic pressure to tune the interband transition energies (in the neighborhood of the AlInAs band gap) into resonance. Our tight-binding calculation of the electronic envelope functions shows that the resonance is related to the optical transitions between electron and hole extended states. The strong resonant enhancement of Raman peaks occurs only for AlInAs LO phonons which are confined in the barrier layers, but not for GaInAs LO phonons, providing direct experimental evidence for the spatial distribution of extended excitons.

Original language	English (US)
Pages (from-to)	273-277
Number of pages	5
Journal	Superlattices and Microstructures
Volume	12
Issue number	2
DOIs	https://doi.org/10.1016/0749-6036(92)90351-5
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells",

abstract = "Resonant Raman scattering is investigated on GaInAs/AlInAs multiple quantum well (MQW) heterostructures, lattice-matched to InP substrates. The resonance is realized at several fixed laser lines by varying the hydrostatic pressure to tune the interband transition energies (in the neighborhood of the AlInAs band gap) into resonance. Our tight-binding calculation of the electronic envelope functions shows that the resonance is related to the optical transitions between electron and hole extended states. The strong resonant enhancement of Raman peaks occurs only for AlInAs LO phonons which are confined in the barrier layers, but not for GaInAs LO phonons, providing direct experimental evidence for the spatial distribution of extended excitons.",

author = "Jiang, {D. S.} and Zhang, {Y. H.} and C. Abraham and K. Syassen and Xia, {J. B.} and K. Ploog",

year = "1992",

doi = "10.1016/0749-6036(92)90351-5",

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T1 - A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

AU - Jiang, D. S.

AU - Zhang, Y. H.

AU - Abraham, C.

AU - Syassen, K.

AU - Xia, J. B.

AU - Ploog, K.

PY - 1992

Y1 - 1992

N2 - Resonant Raman scattering is investigated on GaInAs/AlInAs multiple quantum well (MQW) heterostructures, lattice-matched to InP substrates. The resonance is realized at several fixed laser lines by varying the hydrostatic pressure to tune the interband transition energies (in the neighborhood of the AlInAs band gap) into resonance. Our tight-binding calculation of the electronic envelope functions shows that the resonance is related to the optical transitions between electron and hole extended states. The strong resonant enhancement of Raman peaks occurs only for AlInAs LO phonons which are confined in the barrier layers, but not for GaInAs LO phonons, providing direct experimental evidence for the spatial distribution of extended excitons.

AB - Resonant Raman scattering is investigated on GaInAs/AlInAs multiple quantum well (MQW) heterostructures, lattice-matched to InP substrates. The resonance is realized at several fixed laser lines by varying the hydrostatic pressure to tune the interband transition energies (in the neighborhood of the AlInAs band gap) into resonance. Our tight-binding calculation of the electronic envelope functions shows that the resonance is related to the optical transitions between electron and hole extended states. The strong resonant enhancement of Raman peaks occurs only for AlInAs LO phonons which are confined in the barrier layers, but not for GaInAs LO phonons, providing direct experimental evidence for the spatial distribution of extended excitons.

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JO - Superlattices and Microstructures

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ER -

A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

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