A novel violet and blue enhanced SINP silicon photovoltaic device

Bo He, Quan Ma Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, Nan Sheng Zhang, Zheng Shan Yu, Yan Ting Yin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail.

Original languageEnglish (US)
Title of host publication2009 Symposium on Photonics and Optoelectronics, SOPO 2009
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 Symposium on Photonics and Optoelectronics, SOPO 2009 - Wuhan, China
Duration: Aug 14 2009Aug 16 2009

Publication series

Name2009 Symposium on Photonics and Optoelectronics, SOPO 2009

Conference

Conference2009 Symposium on Photonics and Optoelectronics, SOPO 2009
Country/TerritoryChina
CityWuhan
Period8/14/098/16/09

Keywords

  • Current-voltage(I-V) characteristics
  • ITO
  • Responsivity
  • SINP photovoltaic device
  • Spectral response

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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