Abstract
Various characterization techniques have historically been developed in order to screen potential induced degradation (PID)-susceptible cells, but those techniques require final solar cells. We present a new characterization technique for screening PID-susceptible cells during the cell fabrication process. Illuminated Lock-In Thermography (ILIT) was used to image PID shunting of the cell without metallization and clearly showed PID-affected areas. PID-susceptible cells can be screened by ILIT, and the sample structure can advantageously be simplified as long as the sample has the silicon nitride antireflection coating and an aluminum back surface field.
Original language | English (US) |
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Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 907-910 |
Number of pages | 4 |
Volume | 2016-November |
ISBN (Electronic) | 9781509027248 |
DOIs | |
State | Published - Nov 18 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Other
Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
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Country/Territory | United States |
City | Portland |
Period | 6/5/16 → 6/10/16 |
Keywords
- electroluminescence
- lock-in thermography
- photovoltaic cells
- PID
- reliability
- silicon
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering