A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Ying Chen Chen; Chao Cheng Lin; Szu Tung Hu; Chih Yang Lin; Burt Fowler; Jack Lee

doi:10.1038/s41598-019-48932-5

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Ying Chen Chen, Chao Cheng Lin, Szu Tung Hu, Chih Yang Lin, Burt Fowler, Jack Lee

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.

Original language	English (US)
Article number	12420
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-48932-5
State	Published - Dec 1 2019
Externally published	Yes

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title = "A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application",

abstract = "Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.",

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AU - Hu, Szu Tung

AU - Lin, Chih Yang

AU - Fowler, Burt

AU - Lee, Jack

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AB - Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.

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A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Abstract

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