A new model for including discrete dopant ions into Monte Carlo simulations

Stephen M. Ramey; David K. Ferry

doi:10.1109/TNANO.2003.820797

A new model for including discrete dopant ions into Monte Carlo simulations

Stephen M. Ramey, David K. Ferry

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the I_D-V _G characteristics of thin SOI MOSFETs.

Original language	English (US)
Pages (from-to)	193-197
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	2
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2003.820797
State	Published - Dec 2003

Keywords

MOSFETs
Monte Carlo methods
Quantum theory
Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2003.820797

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title = "A new model for including discrete dopant ions into Monte Carlo simulations",

abstract = "A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the ID-V G characteristics of thin SOI MOSFETs.",

keywords = "MOSFETs, Monte Carlo methods, Quantum theory, Silicon-on-insulator (SOI) technology",

author = "Ramey, {Stephen M.} and Ferry, {David K.}",

note = "Funding Information: Manuscript received July 3, 2003; revised July 17, 2003. This work was supported by the Semiconductor Research Corporation. This paper was presented in part at the IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2003. The authors are with the Department of Electrical Engineering and the Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706 USA (e-mail: steve.ramey@asu.edu). Digital Object Identifier 10.1109/TNANO.2003.820797",

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doi = "10.1109/TNANO.2003.820797",

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AU - Ferry, David K.

N1 - Funding Information: Manuscript received July 3, 2003; revised July 17, 2003. This work was supported by the Semiconductor Research Corporation. This paper was presented in part at the IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2003. The authors are with the Department of Electrical Engineering and the Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706 USA (e-mail: steve.ramey@asu.edu). Digital Object Identifier 10.1109/TNANO.2003.820797

PY - 2003/12

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N2 - A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the ID-V G characteristics of thin SOI MOSFETs.

AB - A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the ID-V G characteristics of thin SOI MOSFETs.

KW - MOSFETs

KW - Monte Carlo methods

KW - Quantum theory

KW - Silicon-on-insulator (SOI) technology

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A new model for including discrete dopant ions into Monte Carlo simulations

Abstract

Keywords

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