TY - JOUR
T1 - A CMOS Low-Dropout Regulator with Current-Mode Feedback Buffer Amplifier
AU - Oh, Wonseok
AU - Bakkaloglu, Bertan
N1 - Funding Information:
Manuscript received October 17, 2006; revised March 2, 2007. This work is supported by Connection One Research Center, National Science Foundation I/U CRC, and Texas Instruments Incorporated. This paper was recommended by Associate Editor E. Alarcon. W. Oh is with the RFMD Inc., Chandler, AZ 85266 USA (e-mail: wonseok. oh@rfmd.com). B. Bakkaloglu is with the Department of Electrical Engineering, Arizona State University Tempe, AZ 85287 USA (e-mail: bertan@asu.edu). Digital Object Identifier 10.1109/TCSII.2007.901621
PY - 2007/10
Y1 - 2007/10
N2 - Current feedback amplifiers (CFAs) provide fast response and high slew rate with Class-AB operation. Fast response, low-dropout regulators (LDRs) are critical for supply regulation of deep-submicron analog baseband and RF system-on-chip designs. An LDR with an CFA-based second stage driving the regulation field-effect transistor is presented. The low dropout (LDO) achieves an output noise spectral density of 67.7 nV/Hz−−−√, and PSR of 38 dB, both at 100 kHz. In comparison to an equivalent power consumption voltage feedback buffer LDO, the proposed CFA-based LDO settles 60% faster, achieving 0.6-μs settling time for a 25-mA load step. The LDO with CFA buffer is designed and fabricated on a 0.25-μm CMOS process with five layers of metal, occupying 0.23-mm2 silicon area.
AB - Current feedback amplifiers (CFAs) provide fast response and high slew rate with Class-AB operation. Fast response, low-dropout regulators (LDRs) are critical for supply regulation of deep-submicron analog baseband and RF system-on-chip designs. An LDR with an CFA-based second stage driving the regulation field-effect transistor is presented. The low dropout (LDO) achieves an output noise spectral density of 67.7 nV/Hz−−−√, and PSR of 38 dB, both at 100 kHz. In comparison to an equivalent power consumption voltage feedback buffer LDO, the proposed CFA-based LDO settles 60% faster, achieving 0.6-μs settling time for a 25-mA load step. The LDO with CFA buffer is designed and fabricated on a 0.25-μm CMOS process with five layers of metal, occupying 0.23-mm2 silicon area.
KW - Current feedback amplifier (CFA)
KW - low-dropout regulators (LDRs)
KW - power supply rejection
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U2 - 10.1109/TCSII.2007.901621
DO - 10.1109/TCSII.2007.901621
M3 - Article
AN - SCOPUS:36248933177
SN - 1549-7747
VL - 54
SP - 922
EP - 926
JO - IEEE Transactions on Circuits and Systems II: Express Briefs
JF - IEEE Transactions on Circuits and Systems II: Express Briefs
IS - 10
ER -