TY - GEN
T1 - A 12nm FinFET-based High-Efficiency 2.4GHz 16dBm Power Amplifier with Digitally Controlled Harmonic Suppression
AU - Kythakyapuzha, Shobak
AU - Liu, John
AU - Eliezer, Oren
AU - Kitchen, Jennifer
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - A highly-efficient (32%) power amplifier (PA) with 16.5dBm output power and digitally controlled harmonic suppression is designed in a 12 nm FinFET CMOS process. The PA operates from a supply voltage of 1.6 V, consumes 124 mW, and has a total die area is 0.27 mm2.
AB - A highly-efficient (32%) power amplifier (PA) with 16.5dBm output power and digitally controlled harmonic suppression is designed in a 12 nm FinFET CMOS process. The PA operates from a supply voltage of 1.6 V, consumes 124 mW, and has a total die area is 0.27 mm2.
KW - 12nm FinFET CMOS
KW - Bluetooth Low Energy Transceiver
KW - harmonic suppression
KW - High-efficiency power amplifier
UR - http://www.scopus.com/inward/record.url?scp=85168757280&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85168757280&partnerID=8YFLogxK
U2 - 10.1109/WMCS58822.2023.10194266
DO - 10.1109/WMCS58822.2023.10194266
M3 - Conference contribution
AN - SCOPUS:85168757280
T3 - Proceedings of the 2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023
BT - Proceedings of the 2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023
Y2 - 19 April 2023 through 20 April 2023
ER -