A 12nm FinFET-based High-Efficiency 2.4GHz 16dBm Power Amplifier with Digitally Controlled Harmonic Suppression

Shobak Kythakyapuzha, John Liu, Oren Eliezer, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A highly-efficient (32%) power amplifier (PA) with 16.5dBm output power and digitally controlled harmonic suppression is designed in a 12 nm FinFET CMOS process. The PA operates from a supply voltage of 1.6 V, consumes 124 mW, and has a total die area is 0.27 mm2.

Original languageEnglish (US)
Title of host publicationProceedings of the 2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338805
DOIs
StatePublished - 2023
Event2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023 - Waco, United States
Duration: Apr 19 2023Apr 20 2023

Publication series

NameProceedings of the 2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023

Conference

Conference2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2023
Country/TerritoryUnited States
CityWaco
Period4/19/234/20/23

Keywords

  • 12nm FinFET CMOS
  • Bluetooth Low Energy Transceiver
  • harmonic suppression
  • High-efficiency power amplifier

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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