3-D cross-point array operation on AlOy/HfOx-based vertical resistive switching memory

Bin Gao, Bing Chen, Rui Liu, Feifei Zhang, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOy/HfO x-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.

Original languageEnglish (US)
Article number6780612
Pages (from-to)1377-1381
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - May 2014


  • 3-D integration
  • cross-point array
  • resistive random access memory (RRAM)
  • resistive switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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