1.3-micron GaAsSb/GaAs VCSELs

P. Dowd, Shane Johnson, S. A. Chaparro, S. A. Feld, M. P. Horning, M. Adamcyk, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Number of pages5
StatePublished - 2003
EventSemiconductor Optoelectronic Devices for Lightwave Communication - Orlando, FL, United States
Duration: Sep 8 2003Sep 10 2003


OtherSemiconductor Optoelectronic Devices for Lightwave Communication
Country/TerritoryUnited States
CityOrlando, FL


  • GaAsSb
  • Long wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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