1.3-micron GaAsSb/GaAs VCSELs

P. Dowd; Shane Johnson; S. A. Chaparro; S. A. Feld; M. P. Horning; M. Adamcyk; Yong-Hang Zhang

1.3-micron GaAsSb/GaAs VCSELs

P. Dowd, Shane Johnson, S. A. Chaparro, S. A. Feld, M. P. Horning, M. Adamcyk, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	135-139
Number of pages	5
Volume	5248
State	Published - 2003
Event	Semiconductor Optoelectronic Devices for Lightwave Communication - Orlando, FL, United States Duration: Sep 8 2003 → Sep 10 2003

Other

Other	Semiconductor Optoelectronic Devices for Lightwave Communication
Country/Territory	United States
City	Orlando, FL
Period	9/8/03 → 9/10/03

Keywords

GaAsSb
Long wavelength
VCSEL

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

@inproceedings{c8d63055e5a740d49acd32a84836dce9,

title = "1.3-micron GaAsSb/GaAs VCSELs",

abstract = "Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.",

keywords = "GaAsSb, Long wavelength, VCSEL",

author = "P. Dowd and Shane Johnson and Chaparro, {S. A.} and Feld, {S. A.} and Horning, {M. P.} and M. Adamcyk and Yong-Hang Zhang",

year = "2003",

language = "English (US)",

volume = "5248",

pages = "135--139",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Semiconductor Optoelectronic Devices for Lightwave Communication ; Conference date: 08-09-2003 Through 10-09-2003",

}

TY - GEN

T1 - 1.3-micron GaAsSb/GaAs VCSELs

AU - Dowd, P.

AU - Johnson, Shane

AU - Chaparro, S. A.

AU - Feld, S. A.

AU - Horning, M. P.

AU - Adamcyk, M.

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.

AB - Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.

KW - GaAsSb

KW - Long wavelength

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=1842477223&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842477223&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:1842477223

VL - 5248

SP - 135

EP - 139

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Semiconductor Optoelectronic Devices for Lightwave Communication

Y2 - 8 September 2003 through 10 September 2003

ER -

1.3-micron GaAsSb/GaAs VCSELs

Abstract

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Keywords

ASJC Scopus subject areas

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