Sort by
Keyphrases
LDMOS Device
100%
Reverse Recovery
100%
Epitaxial Layers
42%
Ultra-clean
14%
Pulse Technique
14%
Transmission Line Pulse
14%
Structural Defects
14%
MOS Capacitor
14%
Switching Time
14%
Diode Behavior
14%
Defect Study
14%
Reverse Recovery Time
14%
Defect Distribution
14%
Metallic Impurities
14%
Semiconductor Materials
14%
Recovery Effect
14%
Charge Density
14%
Charge Trapping
14%
Spatial Distribution
14%
Scope of Work
14%
Material Characterization
14%
Device Characterization
14%
Diode
14%
Semiconductor Devices
14%
Measurement Techniques
14%
Mechanical Stress
14%
Carrier Lifetime
14%
Engineering
Epitaxial Film
100%
Structural Defect
33%
Switching Time
33%
Pulse Technique
33%
Reverse Recovery Time
33%
Charge Density
33%
Test Sample
33%
Electric Lines
33%
Carrier Lifetime
33%
Mechanical Stress
33%
Semiconductor Device
33%
Semiconductor Material
33%
Spatial Distribution
33%