Engineering
Resistive
100%
Resistive Random Access Memory
54%
Silicon Oxide
20%
Nonlinearity
19%
Disturbance Decoupling
13%
Memory Array
11%
Nanosphere Lithography
10%
Nonvolatile Memory
10%
Dielectrics
9%
Random Access Memory Device
9%
Engineering
7%
Switching Threshold
7%
Experimental Result
6%
Exchange Reaction
6%
Nanopillar
6%
Experimental Measurement
6%
Active Suspension
6%
Suspension System
6%
Nonlinear Behavior
6%
Internals
5%
Low Power Consumption
5%
Complementary Metal-Oxide-Semiconductor
5%
Material Science
Resistive Random-Access Memory
56%
Oxide Compound
54%
Density
36%
Silicon
31%
Electronic Circuit
16%
Dielectric Material
16%
Vanadium
13%
Neuromorphic Computing
12%
Complementary Metal-Oxide-Semiconductor Device
12%
Transistor
10%
Lithography
10%
Nanosphere
10%
Switch
9%
Metal Oxide
9%
Phase Composition
6%
Hafnium
6%
Film
6%
Electrochemical Reaction
6%
Keyphrases
Resistive Random Access Memory (ReRAM)
38%
Resistive Switching
19%
Memory Application
19%
Selectorless
18%
SiOx
17%
Oxide-based
14%
Sneak Path Current
12%
HfOx
10%
One-diode
10%
Crossbar Array
9%
Resistors
9%
Multilevel Cell
8%
Graphite
8%
Memristor
8%
Proton Exchange Reaction
7%
Synaptic Behavior
6%
Silicon Oxide
6%
Memory Device
6%
Low Power
6%
Nonlinearity
6%
Complementary Metal Oxide Semiconductor
5%
Memory Array
5%
In-memory
5%