Keyphrases
Ga2O3
100%
Wide Band Gap Semiconductors
30%
Breakdown Field
29%
Barium Titanate
27%
Dielectric
25%
Transistor
22%
Field-effect Transistors
16%
Heterojunction Diode
16%
High Breakdown Field
16%
Schottky Barrier Diode
14%
Permittivity
14%
Drain Spacing
13%
Metal-organic Chemical Vapor Deposition (MOCVD)
13%
High Permittivity Dielectrics
13%
Gallium Oxide
12%
Epitaxial Growth
11%
BaSnO3
11%
Perovskite Oxide
11%
AlGaN-GaN
11%
Power Figure of Merit
10%
Etching Process
10%
Heterostructure Field-effect Transistors
10%
Mg Doping
9%
Field Plate
9%
Sheet Charge Density
9%
Dielectric Layer
9%
In Situ Etching
8%
Field Management
8%
Boron Trichloride
8%
High-permittivity
8%
Gallium
8%
Etching Rate
8%
Modulation-doped
7%
Delta Doping
7%
2-dimensional Electron Gas (2DEG)
7%
Plasma Etching
7%
Field Strength
7%
Power Device
7%
Atomic Scale
7%
Scanning Transmission Electron Microscopy
7%
High Performance
7%
Plasma-assisted Molecular Beam Epitaxy
7%
Breakdown Performance
7%
High Permittivity Materials
7%
Peak Electric Field
7%
Damage-free Etching
7%
Nanopillars
7%
Breakdown Field Strength
6%
Epilayer
6%
In Situ
6%
Material Science
Heterojunction
49%
Dielectric Material
37%
Density
35%
Transistor
30%
Permittivity
28%
Oxide Compound
27%
Field Effect Transistor
24%
Gallium
23%
Molecular Beam Epitaxy
23%
Schottky Barrier
19%
Wide Bandgap Semiconductor
15%
Epitaxy
14%
Chemical Vapor Deposition
13%
Surface (Surface Science)
11%
Power Device
11%
Epilayers
8%
Capacitance
7%
Doping (Additives)
7%
Film
7%
Al2O3
7%
Carrier Concentration
7%
Wide Band Gap Semiconductor
7%
Plasma Etching
7%
Thin Films
6%
Acceptor Doping
5%
Aluminum
5%
Schottky Diode
5%
Superlattice
5%
Lithography
5%
Electrical Breakdown
5%
Oxide Semiconductor
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Scanning Transmission Electron Microscopy
5%
Engineering
Dielectrics
34%
Breakdown Field
30%
Electric Field
29%
Heterojunctions
26%
Schottky Barrier Diode
19%
Band Gap
19%
Field-Effect Transistor
15%
Charge Density
15%
Dielectric Layer
14%
Drain Spacing
12%
Figure of Merit
11%
Field Strength
11%
Power Device
9%
Side Wall
8%
High Current Density
7%
Wide Bandgap Semiconductor
7%
Carrier Concentration
7%
Two Dimensional
7%
Electrostatics Engineering
7%
Breakdown Voltage
6%
Gate Length
5%
Photocurrent
5%
Gap Semiconductor
5%
Phase Stability
5%
Current Gain
5%
Cutoff Frequency
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Assisted Deposition
5%
Tunnel
5%