Nidhin Kurian Kalarickal

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27 Article
4 Conference contribution
1 Chapter

β-GaO Sub-Micron FinFETs With Si Delta-Doped Channel Modulating >3 × 10¹³cm^-2Charge Density
Das, N., Gorsak, C., Kashyap, A., Gilankar, A., Tripathi, P., Paranjape, S. A., Thornton, T., Nair, H. & Kurian Kalarickal, N., 2026, In: IEEE Electron Device Letters. 47, 3, p. 466-469 4 p.
Research output: Contribution to journal › Article › peer-review
>3kV NiO/Ga₂O₃ Heterojunction Diodes With Space-Modulated Junction Termination Extension and Sub-1V Turn-On
Gilankar, A., Katta, A., Das, N. & Kalarickal, N. K., 2025, In: IEEE Journal of the Electron Devices Society. 13, p. 373-377 5 p.
Research output: Contribution to journal › Article › peer-review

Open Access
6 Link opens in a new tab Scopus citations
In situ patterned damage-free etching of three-dimensional structures in β-Ga₂O₃ using triethylgallium
Das, N., Alema, F., Brand, W., Katta, A., Gilankar, A., Osinsky, A. & Kalarickal, N. K., Aug 14 2025, In: Journal of Applied Physics. 138, 6, 065703.
Research output: Contribution to journal › Article › peer-review

Open Access
3 Link opens in a new tab Scopus citations
Demonstration of MOCVD based in situ etching of β-Ga₂O₃ using TEGa
Katta, A., Alema, F., Brand, W., Gilankar, A., Osinsky, A. & Kalarickal, N. K., Feb 21 2024, In: Journal of Applied Physics. 135, 7, 075705.
Research output: Contribution to journal › Article › peer-review

Open Access
27 Link opens in a new tab Scopus citations
Three-step field-plated β-Ga₂O₃ Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown
Gilankar, A., Islam, A. E., McCartney, M. R., Katta, A., Das, N., Smith, D. J. & Kalarickal, N. K., Apr 1 2024, In: Applied Physics Express. 17, 4, 046501.
Research output: Contribution to journal › Article › peer-review

Open Access
17 Link opens in a new tab Scopus citations

Nidhin Kurian Kalarickal

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Collaborations and top research areas from the last five years

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β-GaO Sub-Micron FinFETs With Si Delta-Doped Channel Modulating >3 × 10¹³cm^-2Charge Density

>3kV NiO/Ga₂O₃ Heterojunction Diodes With Space-Modulated Junction Termination Extension and Sub-1V Turn-On

In situ patterned damage-free etching of three-dimensional structures in β-Ga₂O₃ using triethylgallium

Demonstration of MOCVD based in situ etching of β-Ga₂O₃ using TEGa

Three-step field-plated β-Ga₂O₃ Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

Nidhin Kurian Kalarickal

Fingerprint

Collaborations and top research areas from the last five years

Research output

β-GaO Sub-Micron FinFETs With Si Delta-Doped Channel Modulating >3 × 1013cm-2Charge Density

>3kV NiO/Ga2O3 Heterojunction Diodes With Space-Modulated Junction Termination Extension and Sub-1V Turn-On

In situ patterned damage-free etching of three-dimensional structures in β-Ga2O3 using triethylgallium

Demonstration of MOCVD based in situ etching of β-Ga2O3 using TEGa

Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown

β-GaO Sub-Micron FinFETs With Si Delta-Doped Channel Modulating >3 × 10¹³cm^-2Charge Density

>3kV NiO/Ga₂O₃ Heterojunction Diodes With Space-Modulated Junction Termination Extension and Sub-1V Turn-On

In situ patterned damage-free etching of three-dimensional structures in β-Ga₂O₃ using triethylgallium

Demonstration of MOCVD based in situ etching of β-Ga₂O₃ using TEGa

Three-step field-plated β-Ga₂O₃ Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown