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Keyphrases
Programmable Metallization Cell
100%
GeSe
52%
Conductive Bridging Random Access Memory (CBRAM)
49%
Solid Electrolyte
38%
Chalcogenide Glasses
37%
Total Ionizing Dose
30%
Memory Device
29%
Electrodeposit
26%
Ag-Ge
25%
Silica
24%
Resistive Random Access Memory (ReRAM)
24%
Non-volatile Memory
22%
Cellular Device
22%
Chalcogenides
22%
Cu-SiO2
21%
Cell Memory
20%
Radiation Effects
20%
Electrolyte
18%
Memory Cell
16%
Device-independent
16%
High Resistance State
15%
Silicon Dioxide
15%
Low Resistance State
15%
Low Voltage
14%
Vapor Etching
14%
MOSFET
13%
Arizona State University
13%
Photodiffusion
12%
Non-volatile
12%
Cellular Technology
12%
Resistive State
12%
Annealing
11%
Memory-based
11%
Integrated Circuits
11%
Resistance Switching
11%
Memory Technologies
11%
Conductive Filament
10%
Threshold Voltage
10%
Nanostructures
10%
Oxides
10%
Chalcogenide Thin Films
10%
Raman Spectroscopy
9%
Electrical Characteristics
9%
Dendrite
9%
Ionizing Radiation
9%
Chalcogenide Glass Films
9%
Switching Characteristics
9%
Resistance to Change
9%
Metal Ions
8%
Room Temperature
8%
Material Science
Film
78%
Solid Electrolyte
67%
Silver
49%
Chalcogenides Glass
47%
Electronic Circuit
46%
Chalcogenides
42%
Thin Films
42%
Oxide Compound
33%
Silicon
33%
Surface (Surface Science)
29%
Silicon Dioxide
21%
Electrodeposition
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Nanostructure
16%
Microelectromechanical System
15%
Monolayers
15%
Resistive Random-Access Memory
13%
Density
13%
Phase Composition
13%
X-Ray Diffraction
12%
Lithography
12%
Electrical Property
11%
Conductor
11%
Germanium
11%
Redox Process
10%
Oxidation Reaction
10%
Raman Spectroscopy
9%
Silver Ion
9%
Dielectric Spectroscopy
9%
Cobalt
9%
Thermal Diffusion
8%
Self Assembled Monolayer
7%
Silicide
7%
Transistor
7%
Neuromorphic Computing
7%
Anode
7%
Conductive Film
6%
Doping (Additives)
6%
Solar Cell
6%
Tungsten
6%
Activation Energy
6%
Secondary Ion Mass Spectrometry
5%
Scanning Electron Microscopy
5%
Electrical Resistivity
5%
Cathode
5%
Multilayer
5%
Engineering
Programmable Metallization Cell
57%
Silicon Dioxide
42%
Conductive
32%
Nonvolatile Memory
30%
Nanoscale
25%
Resistive
23%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Integrated Circuit
18%
Thin Films
16%
Random Access Memory
15%
Gamma Ray
12%
High Resistance State
11%
Ionizing Radiation
11%
Room Temperature
11%
Potential Application
10%
Bridging
10%
Resistance Change
9%
Microelectromechanical System
8%
Directionality
7%
Diaphragm
7%
Nanomaterial
7%
Directional
7%
Monolayers
7%
Dopants
7%
Junction Depth
7%
Nanometre
7%
Radiation Effect
7%
Test Structure
7%
Shallow Junction
6%
Metallizations
6%
Current Drain
6%
High Resolution
6%
Lithography
6%
Thermal Diffusion
6%
Transients
6%
Fluid Flow
6%
Random Access Memory Device
5%
Reliability Availability and Maintainability (Reliability Engineering)
5%
Memory Array
5%
Self-Assembled Monolayers
5%
Sheet Resistance
5%
Silver Ion
5%
Activation Energy
5%
Interconnects
5%
Molecular Layer
5%
Etch Rate
5%
Phase Composition
5%
