Keyphrases
4H-SiC
24%
AlGaN-GaN
16%
Aluminum Gallium Nitride (AlGaN)
19%
Analog Neural Network
21%
Artificial Synapses
20%
Charge Trapping Memory
19%
Crossbar
19%
Detrapping
16%
Displacement Damage
23%
Displacement Damage Effect
16%
Domain Walls
63%
Dose-response
23%
Electric Field (E-field)
17%
Emerging Memory
19%
Energy Efficiency
19%
Energy Efficient
22%
GaN HEMT
38%
Heavy Ions
35%
In Situ
17%
In-memory Computing
43%
Interface Traps
20%
Inverter
19%
Irradiation
18%
Lateral Inhibition
17%
Leaky Integrate-and-fire Neuron
23%
Magnetic Domain Wall
19%
Magnetic Tunnel Junction
58%
Memory Array
43%
Memory Device
33%
Memristive Devices
21%
Memristor
88%
Metal-oxide-semiconductor Capacitor (MOSCAP)
20%
Neural Network
37%
Neural Network Inference
27%
Neuromorphic
18%
Neuromorphic Computing
76%
Nitrided Oxide
21%
Non-volatile Memory
34%
Order of Magnitude
21%
Oxide Nitride
26%
Oxide-based
16%
Oxygen Vacancy
25%
Radiation Effects
38%
Resistive Random Access Memory (ReRAM)
100%
Resistive Switching
38%
Silicon Oxide
26%
Tantalum Oxide
38%
Tantalum Pentafluoride
17%
TaOx
88%
Total Ionizing Dose
58%
Engineering
Band Gap
19%
Barrier Layer
13%
Charge Trap Memory
15%
Computer Aided Design
10%
Cross Section
10%
Current Drain
14%
Current-Voltage Characteristic
9%
Deep Neural Network
11%
Degradation Mechanism
9%
Domain Wall
48%
Electric Field
21%
Elevated Temperature
9%
Energy Conservation
19%
Energy Efficiency
19%
Experimental Result
14%
Fits and Tolerances
8%
Flip Flop Circuits
14%
Gamma Radiation
13%
Gamma Ray
11%
Gate Bias
10%
Interface Trap
17%
Inverter
23%
Ionizing Radiation
18%
Magnetic Domain
17%
Magnetic Tunnel Junction
41%
Magnetoelectronics
21%
Memory Array
19%
Metal Oxide Semiconductor
21%
Metal-Oxide-Semiconductor Field-Effect Transistor
32%
Nitride
13%
Nonlinearity
15%
Nonvolatile Memory
20%
Oxygen Vacancy
21%
Passivation
13%
Perpendicular Anisotropy
8%
Phase Composition
13%
Radiation Effect
16%
Random Access Memory
14%
Reaction Stoichiometry
10%
Recurrent Neural Network
10%
Resistive
99%
Resistive Random Access Memory
26%
Room Temperature
15%
Silicon-Oxide-Nitride-Oxide-Silicon
13%
Single Device
12%
Single Event Effect
13%
Surface Potential
13%
Switching Time
8%
Thin Films
10%
Transients
20%
