Keyphrases
Resistive Random Access Memory (ReRAM)
100%
Memristor
88%
TaOx
88%
Neuromorphic Computing
76%
Domain Walls
63%
Total Ionizing Dose
58%
Magnetic Tunnel Junction
58%
In-memory Computing
43%
Memory Array
43%
GaN HEMT
38%
Tantalum Oxide
38%
Resistive Switching
38%
Radiation Effects
38%
Neural Network
37%
Heavy Ions
35%
Non-volatile Memory
34%
Memory Device
33%
Neural Network Inference
27%
Silicon Oxide
26%
Oxide Nitride
26%
Oxygen Vacancy
25%
4H-SiC
24%
Leaky Integrate-and-fire Neuron
23%
Displacement Damage
23%
Dose-response
23%
Energy Efficient
22%
Nitrided Oxide
21%
Analog Neural Network
21%
Memristive Devices
21%
Order of Magnitude
21%
Metal-oxide-semiconductor Capacitor (MOSCAP)
20%
Artificial Synapses
20%
Interface Traps
20%
Crossbar
19%
Aluminum Gallium Nitride (AlGaN)
19%
Magnetic Domain Wall
19%
Inverter
19%
Energy Efficiency
19%
Charge Trapping Memory
19%
Emerging Memory
19%
Neuromorphic
18%
Irradiation
18%
Electric Field (E-field)
17%
In Situ
17%
Tantalum Pentafluoride
17%
Lateral Inhibition
17%
AlGaN-GaN
16%
Detrapping
16%
Oxide-based
16%
Displacement Damage Effect
16%
Engineering
Resistive
99%
Domain Wall
48%
Magnetic Tunnel Junction
41%
Metal-Oxide-Semiconductor Field-Effect Transistor
32%
Resistive Random Access Memory
26%
Inverter
23%
Metal Oxide Semiconductor
21%
Electric Field
21%
Magnetoelectronics
21%
Oxygen Vacancy
21%
Nonvolatile Memory
20%
Transients
20%
Memory Array
19%
Band Gap
19%
Energy Efficiency
19%
Energy Conservation
19%
Ionizing Radiation
18%
Interface Trap
17%
Magnetic Domain
17%
Radiation Effect
16%
Room Temperature
15%
Nonlinearity
15%
Charge Trap Memory
15%
Experimental Result
14%
Current Drain
14%
Random Access Memory
14%
Flip Flop Circuits
14%
Surface Potential
13%
Nitride
13%
Silicon-Oxide-Nitride-Oxide-Silicon
13%
Barrier Layer
13%
Phase Composition
13%
Passivation
13%
Gamma Radiation
13%
Single Event Effect
13%
Single Device
12%
Deep Neural Network
11%
Gamma Ray
11%
Recurrent Neural Network
10%
Reaction Stoichiometry
10%
Computer Aided Design
10%
Thin Films
10%
Gate Bias
10%
Cross Section
10%
Degradation Mechanism
9%
Current-Voltage Characteristic
9%
Elevated Temperature
9%
Perpendicular Anisotropy
8%
Fits and Tolerances
8%
Switching Time
8%
